전기학회논문지 (The Transactions of The Korean Institute of Electrical Engineers)

  • 제60권7호
  • /
  • Pages.1434-1437
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  • 2011
  • /
  • 1975-8359(pISSN)
  • /
  • 2287-4364(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
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Single-configuration FPP method에 의한 실리콘 웨이퍼의 비저항 정밀측정

Precision Measurement of Silicon Wafer Resistivity Using Single-Configuration Four-Point Probe Method

  • 투고 : 2011.03.31
  • 심사 : 2011.05.18
  • 발행 : 2011.07.01
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초록

Precision measurement of silicon wafer resistivity has been using single-configuration Four-Point Probe(FPP) method. This FPP method have to applying sample size, shape and thickness correction factor for a probe pin spacing to precision measurement of silicon wafer. The deference for resistivity measurement values applied correction factor and not applied correction factor was about 1.0 % deviation. The sample size, shape and thickness correction factor for a probe pin spacing have an effects on precision measurement for resistivity of silicon wafer.

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참고문헌

  1. Arther Uhlir, JR. "The Potentials of Infinite Systems of Sources and Numerical Solutions of Problems in Semiconductor Engineering", Bell System Technical Journal, Vol. 34, No. 1, pp. 105-128, 1954.
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  4. ASTM F84, "Test Method for Measuring Resistivity of Silicon Wafers with In-Line Four-Point Probe"
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