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The Korean Institute of Electrical Engineers (대한전기학회)
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Precision Measurement of Silicon Wafer Resistivity Using Single-Configuration Four-Point Probe Method

Single-configuration FPP method에 의한 실리콘 웨이퍼의 비저항 정밀측정

  • Received : 2011.03.31
  • Accepted : 2011.05.18
  • Published : 2011.07.01
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Abstract

Precision measurement of silicon wafer resistivity has been using single-configuration Four-Point Probe(FPP) method. This FPP method have to applying sample size, shape and thickness correction factor for a probe pin spacing to precision measurement of silicon wafer. The deference for resistivity measurement values applied correction factor and not applied correction factor was about 1.0 % deviation. The sample size, shape and thickness correction factor for a probe pin spacing have an effects on precision measurement for resistivity of silicon wafer.

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References

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