Transactions on Electrical and Electronic Materials

  • 제12권3호
  • /
  • Pages.102-105
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  • 2011
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Characteristics of ZnO Films Deposited on Poly 3C-SiC Buffer Layer by Sol-Gel Method

  • 투고 : 2010.11.23
  • 심사 : 2011.04.14
  • 발행 : 2011.06.25
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초록

This work describes the characteristics of zinc oxide (ZnO) thin films formed on a polycrystalline (poly) 3C-SiC buffer layer using a sol-gel process. The deposited ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence (PL) spectra. ZnO thin films grown on the poly 3C-SiC buffer layer had a nanoparticle structure and porous film. The effects of post-annealing on ZnO film were also studied. The PL spectra at room temperature confirmed the crystal quality and optical properties of ZnO thin films formed on the 3C-SiC buffer layer were improved due to close lattice mismatch in the ZnO/3C-SiC interface.

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참고문헌

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피인용 문헌

  1. Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications vol.93, 2016, https://doi.org/10.1016/j.spmi.2016.03.024