Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
권호 표지
DOI QR코드

DOI QR Code

Black Silicon of Pyramid Structure Formation According to the RIE Process Condition

RIE 공정 조건에 의한 피라미드 구조의 블랙 실리콘 형성

  • Jo, Jun-Hwan (Graduate School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Kong, Dae-Young (Graduate School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Cho, Chan-Seob (School of Electrical Engineering, Kyungpook National University) ;
  • Kim, Bong-Hwan (Electronics Engineering, Catholic University of Daegu) ;
  • Bae, Young-Ho (Dept. Electronics Engineering, Uiduk University) ;
  • Lee, Jong-Hyun (Graduate School of Electrical Engineering and Computer Science, Kyungpook National University)
  • 조준환 (경북대학교 대학원 전기전자컴퓨터학부) ;
  • 공대영 (경북대학교 대학원 전기전자컴퓨터학부) ;
  • 조찬섭 (경북대학교 산업전자전기공학부) ;
  • 김봉환 (대구 카돌릭대학교 전자공학과) ;
  • 배영호 (위덕대학교 전자공학과) ;
  • 이종현 (경북대학교 대학원 전기전자컴퓨터학부)
  • Received : 2011.03.02
  • Accepted : 2011.05.17
  • Published : 2011.05.31
Download PDF
⟨ Previous Next ⟩

Abstract

In this study, pyramid structured black silicon process was developed in order to overcome disadvantages of using wet etching to texture the surface of single crystalline silicon and using grass/needle-like black silicon structure. In order to form the pyramidal black silicon structure on the silicon surface, the RIE system was modified to equip with metal-mesh on the top of head shower. The process conditions were : $SF_6/O_2$ gas flow 15/15 sccm, RF power of 200 W, pressure at 50 mTorr ~ 200 mTorr, and temperature at $5^{\circ}C$. The pressure did not affect the pyramid structure significantly. Increasing processing time increased the size of the pyramid, however, the size remained constant at 1 ${\mu}M$ ~ 2 ${\mu}M$ between 15 minutes ~ 20 minutes of processing. Pyramid structure of 1 ${\mu}M$ in size showed to have the lowest reflectivity of 7 % ~ 10 %. Also, the pyramid structure black silicon is more appropriate than the grass/needle-like black silicon when creating solar cells.

Keywords

References

  1. R.B. Bergmann, C. Berge, T.J. Rinke, J. Schmidt, and J.H. Werner, " Advances in monocrystalline Si thin film solar cells by layer transfer", Solar Energy Materials & Solar Cells, vol. 74, pp. 213-218 , 2002. https://doi.org/10.1016/S0927-0248(02)00070-3
  2. U Gangopadhyay, S K Dhungel, K Kim, U Manna, P K Basu, H J Kim, B Karunagaran, K S Lee, J S Yoo, and J Yi" Novel low cost chemical texturing for very large area industrial multi-crystalline silicon solar cells," Semicond. Sci. Technol. , vol. 20, pp. 938-946, 2005. https://doi.org/10.1088/0268-1242/20/9/009
  3. Y.H. Lee, J.H. Jo, S.W. Kim, D.Y. Kong, C.T. Seo, C.S. Cho, and J.H. Lee, "A study on improving the surface morphology of recycled wafer for solar cells using micro_blaster", J. Kor. Sensors Soc., vol. 19, no. 4, pp. 291-298, 2010.
  4. Hsiao-Yen Chung, Chiun-Hsun Chen, and Hsin-Sen Chu ," Analysis of pyramidal surface texturization of silicon solar cells by molecular dynamics simulations", International Journal of Photoenergy, vol. 2008, Article ID 282791, pp. 1-6 , 2008.
  5. Toshiki Yagi, Yukiharu Uraoka, and Takashi Fuyuki, "Ray-trace simulation of light trapping in silicon solar cell with texture structures", Solar Energy Materials & Solar Cells, vol. 90, pp. 2647-2656, 2006. https://doi.org/10.1016/j.solmat.2006.02.031
  6. Henri Jansen, Meint de Boer, Johannes Burger, Rob Legtenberg, and Miko Elwenspoek", The black silicom method H: The effect of mask material and loading on the reactive ion etching of deep silicon trenches", Microelectronic Engineering, vol. 27, pp. 475-480, 1995. https://doi.org/10.1016/0167-9317(94)00149-O
  7. Jinsu Yoo, Gwonjong Yu, and Junsin Yi, "Black surface structures for crystalline silicon solar cells", Materials Science and Engineering B, pp. 333-337, 2009.
  8. J Yoo, Kyunghae Kim, M Thamilselvan, N Lakshminarayn, Young Kuk Kim, Jaehyeong Lee, Kwon Jong Yoo, and Junsin Yi, "RIE texturing optimization for thin c-si solar cells in $SF_6/O_2$ plasma", Journal of physics d: applied physics vol. 41, pp. 125-205 , 2008.
  9. Kyoung-soo Lee, Man-HyoHa, JongHwan Kim, and Ji-Weon Jeong "Damage-free reactive ion etch for high-efficiency large-area multi-crystalline silicon solar cells", Solar Energy Materials & Solar Cells 95 pp. 66-68, 2011. https://doi.org/10.1016/j.solmat.2010.03.007
  10. Henri Jansen, Meint de Boer, Rob Legtenberg, and Miko Elwenspoek J. "The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control", Micromech. Microeng. vol. 5, pp. 115-120, 1995. https://doi.org/10.1088/0960-1317/5/2/015
  11. S. Chattopadhyay, Y.F. Huang, Y.J. Jen, A. Ganguly, K.H. Chen, and L.C. Chen, "Anti-reflecting and photonic nanostructures,"Materials Science and Engineering, vol. R 69, pp. 1-35, 2010.