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Characteristic of Al-In-Sn-ZnO Thin Film Prepared by FTS System with Hetero Targets

  • Hong, Jeong-Soo (Department of Electrical Engineering, Kyungwon University) ;
  • Kim, Kyung-Hwan (Department of Electrical Engineering, Kyungwon University)
  • 투고 : 2010.10.17
  • 심사 : 2011.03.16
  • 발행 : 2011.04.25

초록

In order to improve efficiency and make a new material thin film, we prepared the Al-In-Sn-ZnO thin film on a glass substrate at room temperature using a Facing Target Sputtering (FTS) system. The FTS system was designed to array two targets that face each other. Two different kinds of targets were installed on the FTS system. We used an ITO ($In_2O_3$ 90wt%, $SnO_2$ 10wt%) target and an AZO (ZnO 98wt%, $Al_2O_3$ 2wt%) target. The AIZTO films were deposited using different applied powers to the targets. The as-deposited AIZTO thin films were investigated using a UV/VIS spectrometer, an X-ray diffratometer (XRD), and Energy Dispersive X-ray spectroscopy (EDX).

키워드

참고문헌

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피인용 문헌

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  2. Investigation of the effect of oxygen gas on properties of GAZO thin films fabricated by facing targets sputtering system vol.29, pp.7, 2014, https://doi.org/10.1088/0268-1242/29/7/075007
  3. Effect of Deposition Temperature on the Properties of Eu3+-doped MgMoO4Phosphor Thin Films vol.49, pp.1, 2016, https://doi.org/10.5695/JKISE.2016.49.1.81
  4. Effect of dopants and thermal treatment on properties of Ga-Al-ZnO thin films fabricated by hetero targets sputtering system vol.531, 2013, https://doi.org/10.1016/j.tsf.2013.01.089
  5. Properties of AZO/Ag/AZO Multilayer Thin Film Deposited on Polyethersulfone Substrate vol.14, pp.1, 2013, https://doi.org/10.4313/TEEM.2013.14.1.9