Transactions of the Society of Information Storage Systems (정보저장시스템학회논문집)

The Society of Information Storage Systems (정보저장시스템학회)
권호 표지
DOI QR코드

DOI QR Code

Fluid-Structure Interaction Modeling and Simulation of CMP Process for Semiconductor Manufacturing

  • Sung, In-Ha (Dept. of Mechanical Engineering, Hannam University) ;
  • Yang, Woo-Yul (Dept. of Mechanical Engineering, Hannam University) ;
  • Kwark, Ha-Slomi (Dept. of Mechanical Engineering, Hannam University) ;
  • Yeo, Chang-Dong (Dept. of Mechanical Engineering, Texas Tech University)
  • Received : 2011.08.08
  • Accepted : 2011.09.23
  • Published : 2011.09.25
Download PDF
⟨ Previous Next ⟩

Abstract

Chemical mechanical planarization is one of the core processes in fabrication of semiconductors, which are increasingly used for information storage devices like solid state drives. For higher data capacity in storage devices, CMP process is required to show ultimate precision and accuracy. In this work, 2-dimensional finite element models were developed to investigate the effects of the slurry particle impact on microscratch generation and the phenomena generated at pad-particle-wafer contact interface. The results revealed that no plastic deformation and corresponding material removal could be generated by simple impact of slurry particles under real CMP conditions. From the results of finite element simulations, it could be concluded that the pad-particle mixture formed in CMP process would be one of major factors leading to microscratch generation.

Keywords

References

  1. P. B. Zantyea, A. Kumara, A.K. Sikder, 2004, "Chemical mechanical planarization for microelectronics Applications", Materials Science and Engineering R, Vol. 45, pp.89-220. https://doi.org/10.1016/j.mser.2004.06.002
  2. M. R. Oliver, 2003, "Chemical Mechanical Polishing", Semiconductor International, Vol. 26, No. 6, p. 130.
  3. G. Yinbiao, Y. Wei, C. Zhen, P. Yunfeng, 2010, "Research on the with-in wafer non-uniformity (WIWNU) of the large quadrate optic in the fast polishing process", Advanced Materials Research, Vol. 126-128, pp.475-480. https://doi.org/10.4028/www.scientific.net/AMR.126-128.475
  4. N. Saka, T. Eusner, J. H. Chun, 2008, "Nano-Scale Scratching in Chemical-Mechanical Polishing", CIRP Annals - Manufacturing Technology, Vol. 57, No. 1, pp. 341-344. https://doi.org/10.1016/j.cirp.2008.03.098
  5. Y.-Y. Lin, D.-Y. Chen, C. Ma, 2009, "Simulations of a Stress and Contact Model in a Chemical Mechanical Polishing Process", Thin Solid Films, Vol. 517, No. 21, pp. 6027-6033. https://doi.org/10.1016/j.tsf.2009.05.021
  6. Bathe, K., Zhang, H., and Ji, S., "Finite Element Analysis of Fluid Flows Fully Coupled with Structural Interactions," Computers and Structures, Vol. 72, No. 1, pp. 1-16, 1999. https://doi.org/10.1016/S0045-7949(99)00042-5
  7. J. Feng, D. Wang, H. Liu et al., 2003, "Finite Element Simulation of Thermal Stress During Diffusion Bonding of $Al_2O_3$Ceramic to Aluminium," Science and Technology of Welding and Joining, Vol. 8, No. 2, pp. 138-142.
  8. Y. Li, Microelectronic Applications of Chemical Mechanical Planarization, Wiley-Interscience, 2007.
  9. H. J. Kim, 2010, "Fundamental Studies on the Scratches during CMP", Proceedings of the International Conference on Planarization/CMP Technology 2010.
  10. J. C. Yang, D. W. Oh, H. J. Kim, T. Kim, 2010, "Investigation on Surface Hardening of Polyurethane Pads During Chemical Mechanical Polishing (CMP)", Journal of Electronic Materials, Vol. 39, No. 3, pp.338-346. https://doi.org/10.1007/s11664-009-1064-0