전기학회논문지 (The Transactions of The Korean Institute of Electrical Engineers)

  • 제59권11호
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  • Pages.2016-2020
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  • 2010
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  • 1975-8359(pISSN)
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  • 2287-4364(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
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산화인듐아연 박막 트랜지스터에서 질소 첨가가스가 활성층의 물성 및 소자의 특성에 미치는 영향

Effects of Nitrogen Additive Gas on the Property of Active Layer and the Device Characteristic in Indium-zinc-oxide thin Film Transistors

  • 이상혁 (한양대 공대 전자전기제어계측공학과) ;
  • 방정환 (한양대 공대 전자전기제어계측공학과) ;
  • 김원 (한양대 공대 전자전기제어계측공학과) ;
  • 엄현석 (한양대 공대 전자전기제어계측공학과) ;
  • 박진석 (한양대 전자전기제어계측공학과)
  • 투고 : 2010.09.13
  • 심사 : 2010.10.23
  • 발행 : 2010.11.01
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초록

Indium-zinc-oxide (IZO) films were deposited at room temperature via RF sputtering with varying the flow rate of additive nitrogen gas ($N_2$). Thin film transistors (TFTs) with an inverted staggered configuration were fabricated by employing the various IZO films, such as $N_2$-added and pure (i.e., w/o $N_2$-added), as active channel layers. For all the deposited IZO films, effects of additive $N_2$ gas on their deposition rates, electrical resistivities, optical transmittances and bandgaps, and chemical structures were extensively investigated. Transfer characteristics of the IZO-based TFTs were measured and characterized in terms of the flow rate of additive $N_2$ gas. The experimental results indicated that the transistor action occurred when the $N_2$-added (with $N_2$ flow rate of 0.4-1.0 sccm) IZO films were used as the active layer, in contrast to the case of using the pure IZO film.

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