반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

ZnO를 사용한 MOS 커패시터의 제작 조건에 따른 특성 변화

Property Variations of ZnO-based MOS Capacitor with Preparation Conditions

  • Nam, H.G. (Electronic Engineering, Sun Moon University) ;
  • Tang, W.M. (Electrical & Computer Engineering, University of Toronto)
  • 투고 : 2010.09.02
  • 심사 : 2010.09.15
  • 발행 : 2010.09.30
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초록

In this study we investigated the electrical properties of ZnO-based MOS capacitor with $HfO_2$ as the gate dielectric. MIM capacitor, which uses either $HfO_2$ or $Al_2O_3$ as the dielectric layer, is also studied to understand the dependency of the dielectrics on the preparation conditions. It was found that thinner $HfO_2$ films yield better electrical properties, namely lower leakage current and higher breakdown electric field. These properties were observed to deteriorate when subsequently annealed. Capacitance in the depletion region of MOS capacitor was found to increase with UV ozone treatment time up to 60min. However, when the treatment time was extended to 120min, the trend is reversed. The 'threshold voltage' was also observed to positively shift with UV ozone treatment time up to 60min. The shift apparently saturated for longer treatment.

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참고문헌

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