한국응용과학기술학회지 (Journal of the Korean Applied Science and Technology)

  • 제27권2호
  • /
  • Pages.137-143
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  • 2010
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  • 1225-9098(pISSN)
  • /
  • 2288-1069(eISSN)
한국응용과학기술학회 (The Korean Society of Applied Science and Technology)
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$SiN_x$/고분자 이중층 게이트 유전체를 가진 Zinc 산화물 박막 트랜지스터의 저온 공정에 관한 연구

Study on the Low-temperature process of zinc oxide thin-film transistors with $SiN_x$/Polymer bilayer gate dielectrics

  • 이호원 (홍익대학교 정보디스플레이공학과) ;
  • 양진우 (홍익대학교 정보디스플레이공학과) ;
  • 형건우 (홍익대학교 신소재공학과) ;
  • 박재훈 (홍익대학교 전자 전기제어 공학과) ;
  • 구자룡 (홍익대학교 정보디스플레이공학과) ;
  • 조이식 (경원대학교 전자 전기 공학과) ;
  • 권상직 (경원대학교 전자 전기 공학과) ;
  • 김우영 (경원 대학교 디스플레이 공학과) ;
  • 김영관 (홍익대학교 정보디스플레이공학과)
  • Lee, Ho-Won (Dept. of Information Display, Hongik University) ;
  • Yang, Jin-Woo (Dept. of Information Display, Hongik University) ;
  • Hyung, Gun-Woo (Dept. of Materials Science and Engineering, Hongik University) ;
  • Park, Jae-Hoon (Dept. of Electrical, Information and Control Engineering, Hongik University) ;
  • Koo, Ja-Ryong (Dept. of Information Display, Hongik University) ;
  • Cho, Eou-Sik (Dept. of Electronics Engineering, Kyungwon University) ;
  • Kwon, Sang-Jik (Dept. of Electronics Engineering, Kyungwon University) ;
  • Kim, Woo-Young (School of Display Engineering, Hoseo University) ;
  • Kim, Young-Kwan (Dept. of Information Display, Hongik University)
  • 투고 : 2010.04.09
  • 심사 : 2010.06.23
  • 발행 : 2010.06.30
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초록

Oxide semiconductors Thin-film transistors are an exemplified one owing to its excellent ambient stability and optical transparency. In particular zinc oxide (ZnO) has been reported because It has stability in air, a high electron mobility, transparency and low light sensitivity, compared to any other materials. For this reasons, ZnO TFTs have been studied actively. Furthermore, we expected that would be satisfy the demands of flexible display in new generation. In order to do that, ZnO TFTs must be fabricated that flexible substrate can sustain operating temperature. So, In this paper we have studied low-temperature process of zinc oxide(ZnO) thin-film transistors (TFTs) based on silicon nitride ($SiN_x$)/cross-linked poly-vinylphenol (C-PVP) as gate dielectric. TFTs based on oxide fabricated by Low-temperature process were similar to electrical characteristics in comparison to conventional TFTs. These results were in comparison to device with $SiN_x$/low-temperature C-PVP or $SiN_x$/conventional C-PVP. The ZnO TFTs fabricated by low-temperature process exhibited a field-effect mobility of $0.205\;cm^2/Vs$, a thresholdvoltage of 13.56 V and an on/off ratio of $5.73{\times}10^6$. As a result, We applied experimental for flexible PET substrate and showed that can be used to ZnO TFTs for flexible application.

키워드

참고문헌

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