대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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계단형 게이트 구조를 이용한 AlGN/GaN HEMT의 전류-전압특성 분석

Analysis of Current-Voltage characteristics of AlGaN/GaN HEMTs with a Stair-Type Gate structure

  • 김동호 (고려대학교 전자전기 공학과) ;
  • 정강민 (고려대학교 전자전기공학과) ;
  • 김태근 (고려대학교 전자전기공학과)
  • Kim, Dong-Ho (School of Electronics and Electrical Engineering, Korea University) ;
  • Jung, Kang-Min (School of Electronics and Electrical Engineering, Korea University) ;
  • Kim, Tae-Geun (School of Electronics and Electrical Engineering, Korea University)
  • 투고 : 2009.10.21
  • 심사 : 2010.04.26
  • 발행 : 2010.06.25
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초록

본 논문에서는 고출력 고이득 특성을 갖는 고전자이동도 트랜지스터 (high-electron mobility transistor, HEMT)를 구현하기 위하여 계단형 구조의 게이트 전극을 갖는 AlGaN/GaN HEMT를 제안하였고, 소자의 DC 특성의 향상 가능성을 확인하기 위하여 단일 게이트 전극을 갖는 HEMT 및 field-plate 구조의 게이트 전극을 갖는 HEMT 소자와의 특성을 비교 분석하였다. 상용 시뮬레이터를 통해 시뮬레이션 결과, 본 연구에서 제안한 계단형 구조의 게이트 전극을 갖는 AlGaN/GaN HEMT는 드레인 전압의 인가 시, 소자의 내부에서 발생하는 전계가 단일 게이트 전극을 갖는 HEMT에 비해 약 70% 정도 감소하는 특성을 갖는 것을 확인하였고, 전달이득 (transconductance, $g_m$) 특성 역시 단일 게이트 전극구조의 HEMT나 field-plate 구조를 삽입한 HEMT에 비해 약 11.4% 정도 향상된 우수한 DC 특성을 갖는 것을 확인하였다.

We present simulation results on DC characteristics of AlGaN/GaN HEMT having stair-type gate electrodes, in comparison with those of the conventional single gate AlGaN/GaN HEMTs and field-plate enhanced AlGaN/GaN HEMTs. In order to reduce the internal electric field near the gate electrode of conventional HEMT and thereby to increase their DC characteristics, we applied three-layered stacking electrode schemes to the standard AlGaN/GaN HEMT structure. As a result, we found that the internal electric field was decreased by 70% at the same drain bias condition and the transconductance (gm) was improved by 11.4% for the proposed stair-type gate AlGaN/GaN HEMT, compared with those of the conventional single gate and field-plate enhanced AlGaN/GaN HEMTs.

키워드

참고문헌

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