DOI QR코드

DOI QR Code

Hg 분위기 열처리에 따른 적외선 감지용 Hg0.7Cd0.3Te 박막의구조적 특성 변화

Effect of Hg-ambient annealing on Hg0.7Cd0.3Te thin films for IR detector

  • 김광천 (한국과학기술연구원 재료연구본부 전자재료센터) ;
  • 이차헌 (홍익대학교 공과대학 신소재공학부) ;
  • 최원철 (한국과학기술연구원 재료연구본부 전자재료센터) ;
  • 김현재 (연세대학교 공과대학 전기전자공학부) ;
  • 김진상 (한국과학기술연구원 재료연구본부 전자재료센터)
  • Kim, Kwang-Chon (Electronic Materials Center, Korea Institute of Science and Technology(KIST)) ;
  • Lee, Cha-Hyun (Department of Materials Science and Enguneering, Hongik University) ;
  • Choi, Won-Chel (Electronic Materials Center, Korea Institute of Science and Technology(KIST)) ;
  • Kim, Hyun-Jae (School of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Jin-Sang (Electronic Materials Center, Korea Institute of Science and Technology(KIST))
  • 투고 : 2010.09.03
  • 심사 : 2010.09.29
  • 발행 : 2010.09.30

초록

The liquid phase epitaxy(LPE) method was widely used to growth of mercury cadmium telluride(MCT) thin films. However, this method lead to Hg-vacancies in MCT thin film, because Hg has high vapor pressure at this temperature range. This is a well known defect in HgCdTe grown by LPE method. In this study, we report the development of techniques for improving the crystalline quality and controlling the composite uniformity of HgCdTe thin films using high- pressure Hg-ambient annealing method. As a result, we achieved the improvement of the composite uniformity of HgCdTe thin films. It was observed by the high angle annular dark field scanning TEM(HAADF-STEM) analysis. Moreover, new HgTe phase and a shrinking of lattice fringe were observed.

키워드

참고문헌

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