한국산학기술학회논문지 (Journal of the Korea Academia-Industrial cooperation Society)

  • 제11권5호
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  • Pages.1592-1596
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  • 2010
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  • 1975-4701(pISSN)
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  • 2288-4688(eISSN)
한국산학기술학회 (The Korea Academia-Industrial cooperation Society)
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IGZO 박막트랜지스터의 동작특성

Operation characteristics of IGZO thin-film transistors

  • 이호년 (순천향대학교 전자정보공학과) ;
  • 김형중 (순천향대학교 전자정보공학과)
  • Lee, Ho-Nyeon (Department of Electronics and Information Engineering, Soonchunhyang University) ;
  • Kim, Hyung-Jung (Department of Electronics and Information Engineering, Soonchunhyang University)
  • 투고 : 2010.01.29
  • 심사 : 2010.05.13
  • 발행 : 2010.05.31
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초록

IGZO (indium gallium zinc oxide) 박막트랜지스터는, 활성층 채널의 폭과 길이의 비가 고정된 경우에도, 채널 길이가 길어지면 게이트전압에 대한 드레인 전류의 특성곡선이 양의 전압 방향으로 이동하고 전계효과이동도는 낮아졌다. 채널의 길이와 폭이 고정된 상태에서는, 드레인이 전압 높은 경우에 전계효과이동도가 낮고 문턱아래 기울기가 큰 특성을 보였다. 이러한 현상은 IGZO 채널층의 일함수가 커서 소스/드레인 전극과 채널층의 접합부 띠굽음이 규소반도체의 경우와 반대방향으로 나타나는 것에 기인하는 것으로 해석된다.

According to the increase of the channel length with fixed width/length, characteristic curves of drain current as a function of gate bias voltage of indium gallium zinc oxide (IGZO) thin-film transistors moved to a positive direction of gate voltage, and field-effect mobility decreased. In case of fixed length and width of channel, field-effect mobility was lower and subthreshold slope was larger when drain bias voltage was higher. Due to large work function of IGZO, band bending at the junction region between IGZO channel and source/drain electrodes was expected to be in opposite direction to that between silicon and metal electrodes; this could explain the above results.

키워드

참고문헌

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