The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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Modeling and Simulation for Transient Pulse Gamma-ray Effects on Semiconductor Devices

반도체 소자의 과도펄스감마선 영향 모델링 및 시뮬레이션

  • 이남호 (한국원자력연구원 원자력융합 기술개발부) ;
  • 이승민 (충남대학교 사범대학 전기전자통신공학교육과)
  • Received : 2010.03.12
  • Accepted : 2010.07.21
  • Published : 2010.09.01
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Abstract

The explosion of a nuclear weapon radiates a gamma-ray in the form of a transient pulse. If the gamma-ray introduces to semiconductor devices, much Electron-Hole Pairs(EHPs) are generated in depletion region of the devices[7]. as a consequence of that, high photocurrent is created and causes upset, latchup and burnout of semiconductor devices[8]. This phenomenon is known for Transient Radiation Effects on Electronics(TREE), also called dose-rate effects. In this paper 3D structure of inverter and NAND gate device was designed and transient pulse gamma-ray was modeled. So simulation for transient radiation effect on inverter and NAND gate was accomplished and mechanism for upset and latchup was analyzed.

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References

  1. D. R. Alexander, "Transient Ionizing Radiation Effects in Devices and Circuits," IEEE Trans. Nucl. Sci., vol. 50, pp. 565–582.
  2. 이남호, 김승호, 김영호, "적외선 탐지소자의 내방사선화 연구", 대한전기학회논문지, 제54C권, 제11호, pp. 490-492, 2005.
  3. 이현진, 이남호, 황영관, "CMOS 소자에서 과도방사선 펄스에 의한 Dose-Rate Latchup 모의실험", 2008 대한 전자공학회 하계종합학술대회, pp. 1185-1186, 2008.
  4. C. Lewis, "Transient Radiation Effects on Electronics (TREE) Handbook," DNA., Alexandria, Tech. Rep. DNA-H-95-61, Dec. 1995.
  5. J. L. Wirth, "The Transient Response of Transistors and Diodes to Ionizing Radiation," IEEE Trans. Nucl. Sci., NS-11(5), pp. 24-38.
  6. T. A. Fjeldly, "Modeling of High-Dose-Rate Transient Ionizing Radiation Effects in Bipolar Devices," IEEE Trans. Nucl. Sci., vol. 48, pp. 1721-1730.
  7. W. L. Brown, "Transient effects of high-intensity radiation in P-N junctions," in Appendix D, Fifth Triannual Tech. Note NEEP, Nov. 1960.
  8. C. W. Gwyn, "An analysis of ionizing radiation effects in four-layer semiconductor devices," IEEE Trans. Nucl. Sci., vol. NS-16, p. 104, Dec. 1969.
  9. 이현진, 오승찬, 이남호, 이민수, 이용수, "pMOSFET의 과도펄스 방사선 영향 연구" 2009 대한전기학회 하계학술대회, pp. 1698-1699, 2009.
  10. ATLAS is a registered trademark of SILVACO, Inc.