Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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Improved Electrical Characteristics of HgSe Nanoparticle-based Thin Film Transistors by Thermal Annealing

열처리를 통한 HgSe 나노입자 기반 박막 트랜지스터의 전기적 특성 향상

  • 윤정권 (고려대학교 전자전기공학과) ;
  • 조경아 (고려대학교 전자전기공학과) ;
  • 김상식 (고려대학교 전자전기공학과)
  • Received : 2010.09.02
  • Accepted : 2010.09.27
  • Published : 2010.09.30
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Abstract

In this study, we fabricated the HgSe nanoparticle-based thin film transistors (TFTs) of back gate structure with PVA gate dielectric. The fabricated TFTs show the improved electrical characteristics in the mobility of $16\;cm^2$/Vs and the on/off ratio of $10^4$ after annealing process at $100^{\circ}C$ for 5 min. AFM images demonstrate that the decrease in surface roughness according to annealing process leads to the improvement of electrical characteristics. The change in drain current caused from the conditions of flexible substrate is investigated under 0.6% strain.

본 연구에서는, PVA를 게이트 유전체로 이용하여 백 게이트 (back-gate) 구조의 HgSe 나노입자 박막트랜지스터를 플라스틱 기판위에 제작하였다. 제작된 박막트랜지스터는 $100^{\circ}C$ 에서 5분 동안의 열처리 과정을 통하여 이동도 $16\;cm^2$/Vs, 전류 점멸비 $10^4$의 우수한 특성을 나타내었다. 열처리에 따른 표면 거칠기의 감소가 소자의 전기적 특성향상의 원인이라는 것을 AFM 이미지를 통하여 확인 할 수 있었다. 0.6%의 strain을 기판에 인가하면서 기판의 휘어짐에 따른 전류변화를 관찰하였다.

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References

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