참고문헌
- A. Ellison, J. Zhang, W. Magnusson, A. Henry, Q. Wahab, J. P. Bergman, C. Hemmingsson, N.T. Son, and E. Janzen, “Fast Sic Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments,” Mater. Sci. Forum, 338-342 131-36 (2000). https://doi.org/10.4028/www.scientific.net/MSF.338-342.131
- A. K. Costa, S.S. Camargo Jr., C. A. Achete, and R. Carius, “Characterization of Ultra-hard Silicon Carbide Coatings Deposited by RF Magnetron Sputtering,” Thin Solid Films, 377-378 243-48 (2000). https://doi.org/10.1016/S0040-6090(00)01321-3
- T. Y. Lin, J. G. Duh, C. K. Chung, and H. Niu, “Fabrication of Low-Stress Plasma Enhanced Chemical Vapor Deposition Silicon Carbide Films,” Jpn. J. Appl. Phys., Part 1 39 6663-71 (2000). https://doi.org/10.1143/JJAP.39.6663
- E. Bertran, E. Martinez, G. Viera, J. Farjas, and P. Roura, “Mechanical Properties of Nanometric Structures of Si/SiC, C/SiC and C/SiN Produced by PECVD,” Diamond Related Mater., 10 [3-7] 1115-20 (2001). https://doi.org/10.1016/S0925-9635(00)00430-1
- A. M. Wrobel, S. Wickramanayaka, K. Kitamura, Y. Nakanishi, and Y. Hatanaka, “Structure-Property Relationships of Amorphous Hydrogenated Silicon-Carbon Films Produced by Atomic Hydrogen-Induced CVD from a Single-Source Precursor,” Chemical Vapor Deposition, 6 [6] 315-22 (2000). https://doi.org/10.1002/1521-3862(200011)6:6<315::AID-CVDE315>3.0.CO;2-7
- A. M. Wrobel, A. Walkiewicz-Pietzykowska, J. E. Klemberg- Sapieha, Y. Hanaka, T. Aoki, and Y. Nakanishi, “Remote Hydrogen Plasma Chemical Vapor Deposition of Silicon-carbon Thin-film Materials from a Hexamethyldisilane Source: Characterization of the Process and the Deposits,” J. Appl. Polym. Sci., 86 1445-58 (2002). https://doi.org/10.1002/app.11304
- T. R. E Simpson and J. L. Keddie, “Evidence From Infrared Ellipsometry for Covalent Bonding at a Polymer/polymer Interface With Relevance to “Lock-up” in Pressure-sensitive Adhesive Laminates,” The J. Adhesion, 79 1207-18 (2003). https://doi.org/10.1080/714906164
-
S. M. Han and E. S. Aydil, “Plasma and Surface Diagnostics During Plasma-enhanced Chemical Vapor Deposition of
$SiO_2$ from$SiH_4/O_2/Ar$ Discharges,” Thin Solid Films, 290- 291 427-34 (1996). https://doi.org/10.1016/S0040-6090(96)09024-4 - H.-S. Jung and H.-H. Park, “Studies on the Structure and Bonding State of Nitric Amorphous Carbon (a-CNx) Films by Reactive rf Magnetron Sputtering,” Thin Solid Films, 377-378 320-25 (2000). https://doi.org/10.1016/S0040-6090(00)01363-8
- Chastain, “Handbook of X-ray Photoelectron Spectroscopy, Perkin-Elmer Corporation Physical Electronic Division,” 1992.
- S. H. Cho, Y. J. Lee, D. J. Choi, and T. S. Kim, “The Deposition Behavior of SiC: H Films Deposited using a Remote PECVD System with an HMDS Precursor and C2H2 Dilution Gas,” J. Ceram. Process. Res., 8 [6] 393-96 (2007).
- K. Sato, H. Haruta, and Y. Kumashiro, “Ab Initio Molecular-orbital Study on the Surface Reactions of Methane and Silane Plasma Chemical Vapor Deposition,” Phys. Rev., 55 15467-70 (1997). https://doi.org/10.1103/PhysRevB.55.15467
- S. H. Cheng, K. Sato, and Y. Kumashiro, “Plasma-chemical Vapor Deposition of Wide Band Gap a-SiC:H films: An ab initio Molecular-orbital Study,” J. Appl. Phys., 87 4031-35 (2000). https://doi.org/10.1063/1.372450
- K. Sato, S. H. Cheng, H. Haruta, T. Yokayama, and Y. Kumashiro, “Substrate Temperature Dependence of the Surface Reaction Mechanism of Methane Plasma Chemical Vapor Depositon : Experimental and Ab Initio Molecular Orbital Study,” Jpn. J. Appl. Phys., 39 2843-46 (2000). https://doi.org/10.1143/JJAP.39.2843
- J. Robertson and E. P. O’reilly, “Electronic and Atomic Structure of Amorphous Carbon,” Phys. Rev. B., 35 2946-57 (1987). https://doi.org/10.1103/PhysRevB.35.2946
- J. Robertson, “Electronic Structure and Bonding of a-C:H,” Mater. Sci. Forum, 52-53 125-50 (1990). https://doi.org/10.4028/www.scientific.net/MSF.52-53.125