동시증착법으로 형성한 Bi-Te 박막의 열전특성

Thermoelectric Properties of Bi-Te Thin Films Processed by Coevaporation

  • 최영남 (홍익대학교 공과대학 신소재공학과) ;
  • 김민영 (홍익대학교 공과대학 신소재공학과) ;
  • 오태성 (홍익대학교 공과대학 신소재공학과)
  • Choi, Young-Nam (Department of Materials Science and Engineering, Hongik University) ;
  • Kim, Min-Young (Department of Materials Science and Engineering, Hongik University) ;
  • Oh, Tae-Sung (Department of Materials Science and Engineering, Hongik University)
  • 투고 : 2010.12.09
  • 심사 : 2010.12.20
  • 발행 : 2010.12.30

초록

Bi 증착원과 Te 증착원의 몰비를 변화시키며 동시증착법으로 Bi-Te 박막을 형성 후, Bi 증착원과 Te 증착원의 몰비에 따른 Bi-Te 박막의 열전특성을 분석하였다. 동시증착법으로 형성한 Bi-Te 박막은 n형 반도체로서, $-60{\sim}-80{\mu}V/K$의 Seebeck 계수를 나타내었다. Bi 증착원의 양이 30 mol%인 조건으로 동시 증착하여 Te 과잉 조성인 박막은 $5{\times}10^{-4}W/m-K^2$의 출력인자를 나타내었으며, Bi 증착원의 양이 90 mol%인 조건으로 동시 증착하여 Bi 과잉 조성인 박막은 $17.7{\times}10^{-4}W/m-K^2$의 출력인자를 나타내었다.

Bi-Te films were processed by coevaporation of Bi and Te dual sources with variations of the mole ratio of the Bi and Te evaporation sources, and thermoelectric properties of the coevaporated Bi-Te films were characterized. The coevaporated Bi-Te films were n-type semiconductors and exhibited Seebeck coefficients of $-60{\sim}-80{\mu}V/K$. The Terich Bi-Te film, processed with Bi and Te dual sources of 30 mol% Bi : 70 mol% Te ratio, exhibited a power factor of $5{\times}10^{-4}W/m-K^2$. On the other hand, a power factor of $17.7{\times}10^{-4}W/m-K^2$ was obtained for the Bi-rich film coevaporated using Bi and Te dual sources of 90 mol% Bi : 10 mol% Te ratio.

키워드

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