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Water Vapor Permeation Properties of Al2O3/TiO2 Passivation Layer Deposited by Atomic Layer Deposition

원자층 증착법을 이용한 Al2O3/TiO2 보호막의 수분 보호 특성

  • Kwon, Tae-Suk (Department of Nanoscale Semiconductor Engineering, Hanyang University) ;
  • Moon, Yeon-Keon (Department of Materials Science and Engineering, Hanyang University) ;
  • Kim, Woong-Sun (Department of Materials Science and Engineering, Hanyang University) ;
  • Moon, Dae-Yong (Department of Nanoscale Semiconductor Engineering, Hanyang University) ;
  • Kim, Kyung-Taek (Department of Materials Science and Engineering, Hanyang University) ;
  • Shin, Sae-Young (Department of Materials Science and Engineering, Hanyang University) ;
  • Han, Dong-Suk (Department of Nanoscale Semiconductor Engineering, Hanyang University) ;
  • Park, Jae-Gun (Department of Electrical and Computer Engineering, Hanyang University) ;
  • Park, Jong-Wan (Department of Materials Science and Engineering, Hanyang University)
  • 권태석 (한양대학교 나노반도체공학과) ;
  • 문연건 (한양대학교 신소재공학과) ;
  • 김웅선 (한양대학교 신소재공학과) ;
  • 문대용 (한양대학교 나노반도체공학과) ;
  • 김경택 (한양대학교 신소재공학과) ;
  • 신새영 (한양대학교 신소재공학과) ;
  • 한동석 (한양대학교 나노반도체공학과) ;
  • 박재근 (한양대학교 전자컴퓨터통신공학과) ;
  • 박종완 (한양대학교 신소재공학과)
  • Received : 2010.08.31
  • Accepted : 2010.10.28
  • Published : 2010.11.30

Abstract

In this study, $Al_2O_3$ and $TiO_2$ films was deposited on to PES (poly(ethersulfon) substrate by using atomic layer deposition as functions of deposition temperature and plasma power. The density and carbon contents of $Al_2O_3$ and $TiO_2$ films was changed by varying process conditions. High density thin films was achieved through optimizing the process conditions. Buffer layer was deposited prior to the processing of upper thin films to avoid PES surface destruction during the high power plasma process and to enhances the tortuous path for water vapor permeation for the defect decoupling effect. The water vapor transmission rate by using MOCON test was investigated to analyze the effect. Water vaper permeation properties was improved by using the inorganic multi-layer passivation layer and activation energy of the water vapor permeation was increased.

원자층 증착법(ALD: atomic layer deposition)을 이용하여 PES (poly (ether sulfon)) 기판위에 증착 온도, 플라즈마 파워에 따라 $Al_2O_3$$TiO_2$ 박막을 증착했다. 공정 조건에 따라 $Al_2O_3$$TiO_2$ 박막의 밀도, 탄소의 함유량이 달라지는 것을 알 수 있었으며, 공정 조건을 변화시켜 고밀도의 박막을 얻을 수 있었다. 플라즈마에 의한 PES 기판 손상을 막기 위해 buffer layer를 도입했으며, 또한 박막 내부 결함에 의한 수분 투과를 지연 또는 막기 위해 다층 구조를 증착했다. 이를 분석하기 위해 MOCON test를 이용해 투습률을 조사하였다. 플라스틱 기판에 다층 구조의 무기물 보호막을 적용했을 시 플라스틱 기판의 투습률 특성이 개선되었으며, 수분 투과에 대한 activation energy 또한 증가하는 것을 알 수 있었다.

Keywords

References

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