Journal of Information Display

  • 제11권3호
  • /
  • Pages.109-112
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  • 2010
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  • 1598-0316(pISSN)
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  • 2158-1606(eISSN)
한국정보디스플레이학회 (The Korean Infomation Display Society)
권호 표지

High-rate, Low-temperature Deposition of Multifunctional Nano-crystalline Silicon Nitride Films

  • Hwang, Jae-Dam (Department of Nano Science and Technology, University of Seoul) ;
  • Lee, Kyoung-Min (Department of Nano Engineering, University of Seoul) ;
  • Keum, Ki-Su (Department of Nano Science and Technology, University of Seoul) ;
  • Lee, Youn-Jin (Department of Nano Science and Technology, University of Seoul) ;
  • Hong, Wan-Shick (Department of Nano Science and Technology, University of Seoul)
  • 투고 : 2010.09.09
  • 심사 : 2010.09.28
  • 발행 : 2010.09.30
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초록

The solid phase compositions and dielectric properties of silicon nitride ($SiN_x$) films prepared using the plasma enhanced chemical vapor deposition (PECVD) technique at a low temperature ($200^{\circ}C$) were studied. Controlling the source gas mixing ratio, R = $[N_2]/[SiH_4]$, and the plasma power successfully produced both silicon-rich and nitrogen-rich compositions in the final films. The composition parameter, X, varied from 0.83 to 1.62. Depending on the film composition, the dielectric properties of the $SiN_x$ films also varied substantially. Silicon-rich silicon nitride (SRSN) films were obtained at a low plasma power and a low R. The photoluminescence (PL) spectra of these films revealed the existence of nano-sized silicon particles even in the absence of a post-annealing process. Nitrogen-rich silicon nitride (NRSN) films were obtained at a high plasma power and a high R. These films showed a fairly high dielectric constant ($\kappa$ = 7.1) and a suppressed hysteresis window in their capacitance-voltage (C-V) characteristics.

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