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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Evaluation of 1/f Noise Characteristics for Si-Based Infrared Detection Materials

  • Ryu, Ho-Jun (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Kwon, Se-In (Innovation Team for Advanced Process Integration, Hynix Semiconductor) ;
  • Cheon, Sang-Hoon (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Cho, Seong-Mok (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Yang, Woo-Seok (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Choi, Chang-Auck (Convergence Components & Materials Research Laboratory, ETRI)
  • Received : 2009.04.29
  • Accepted : 2009.10.09
  • Published : 2009.12.31
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Abstract

Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma-enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma-enhanced chemical vapor deposition (PECVD)-deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film.

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References

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