Fabrication of Fe3O4 Thin Film using Reactive DC Magnetron Sputtering

반응성 DC 마그네트론 스퍼터링으로 Fe3O4 박막 제조에 관한 연구

  • Jung, Minkyung (Department of Mater. Sci. and Eng., Korea University) ;
  • Park, Sungmin (Department of Mater. Sci. and Eng., Korea University) ;
  • Park, Daewon (Department of Mater. Sci. and Eng., Korea University) ;
  • Lee, Seong-Rae (Department of Mater. Sci. and Eng., Korea University)
  • 정민경 (고려대학교 신소재공학부) ;
  • 박성민 (고려대학교 신소재공학부) ;
  • 박대원 (고려대학교 신소재공학부) ;
  • 이성래 (고려대학교 신소재공학부)
  • Received : 2009.02.03
  • Published : 2009.06.25

Abstract

We investigated the effects of deposition conditions on the fabrication of $Fe_{3}O_{4}$ thin films using a reactive DC magnetron sputtering at room temperature. The structural, electrical, and magnetic properties of Fe oxide films dependence on the film thickness, oxygen flow rate, and the substrate crystallinity were also studied. We have successfully fabricated $Fe_{3}O_{4}$ film with thickness of about 10 nm under optimal reactive sputtering conditions. The saturation magnetization, resistivity, and Verwey transition of the $Fe_{3}O_{4}$ film were298 emu/cc, $4.0{\times}10^{-2}{\Omega}cm$, and 125 K, respectively.

Keywords

Acknowledgement

Supported by : 학술진흥재단

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