Journal of Electrical Engineering and Technology

  • 제4권3호
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  • Pages.418-422
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  • 2009
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  • 1975-0102(pISSN)
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  • 2093-7423(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
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Electron Transport Properties of Zn(phen)q Compared with Alq3 in OLED

  • Kim, Byoung-Sang (Dept. of Electrical Engineering & NTRC, Dong-A University) ;
  • Kim, Dong-Eun (Dept. of Electrical Engineering & NTRC, Dong-A University) ;
  • Choi, Gyu-Chae (Dept. of Electrical Engineering & NTRC, Dong-A University) ;
  • Park, Jun-Woo (Dept. of Electrical Engineering & NTRC, Dong-A University) ;
  • Lee, Burm-Jong (Dept. of Biomedicinal Chemistry, Inje University) ;
  • Kwon, Young-Soo (Dept. of Electrical Engineering & NTRC, Dong-A University)
  • 발행 : 2009.09.01
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초록

We synthesized new electroluminescence materials [(1,10-phenanthroline)(8-hydroxyquinoline)] Zn(phen)q and investigated their electron transport properties. We used Zn(phen)q and $Alq_3$ for the conductive materials and measured their electron transport properties as a function of the organic layer thickness. The difference between Zn(phen)q and $Alq_3$ as electron transporting materials suggests that the electrical properties depends on the carrier injection.

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참고문헌

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