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A Study of the Change of Hall Effect as a Function of the V/III Ratio in n-GaAs compound Semiconductors

  • Kim, In-Sung (Department of Optical Communication and Electron Engineering, Gwang-ju University)
  • Published : 2009.08.31

Abstract

In this study, the Hall effect has been studied in n-GaAs samples characterized by V/IIl growth ratios of 25, 50 and 100 and prepared by metal organic chemical vapor deposition. For the Hall effect measurements, the grown samples were cut to a size of 1${\times}$1 cm. The measurements were carried out at room temperature, using Indium contact metal at the four corners of the samples. According to the experimental results, the Schottky effect was not ovservation. Also for the n-GaAs sample of V/Ill 100 ratio the electron drift velocity was very high.

Keywords

References

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Cited by

  1. Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures vol.12, pp.1, 2017, https://doi.org/10.1186/s11671-017-2091-z