한국인터넷방송통신학회논문지 (The Journal of the Institute of Internet, Broadcasting and Communication)

  • 제9권3호
  • /
  • Pages.173-178
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  • 2009
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  • 2289-0238(pISSN)
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  • 2289-0246(eISSN)
한국인터넷방송통신학회 (The Institute of Internet, Broadcasting and Communication)
권호 표지

산화금속의 전기적 스위칭 특성 연구

A study on the electrical switching properties of oxide metal

  • 최성재 (경원대학교 IT대학 전자통신공학부 전자공학과) ;
  • 이원식 (경원대학교 교양대학 자율전공학부)
  • 투고 : 2009.05.15
  • 발행 : 2009.06.30
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초록

금속산화물 박막 소자를 제작하여 전기적 특성을 조사하였다. 소자는 Electrode를 TOP-TOP구조로 제작하였으며 스위칭 특성을 연구하기 위해 전극간의 산화금속박막의 전도특성이 측정되었다. 소자의 저항변화는 전압을 선형적으로 인가하여 측정하였다. 제작된 소자는 MIM구조로써 외부에서 인가하는 전기적 신호에 의하여 전기전도도가 큰 On-state와 전기전도도가 낮은 Off-state로 바뀌는 특성을 나타내었다. $Si/SiO_2/MgO$ 소자는 Forming에 의해 저항이 큰 상태에서 저항이 작은 상태로 전기적 특성이 변화하면서 스위칭 특성을 보였다. 본 연구를 통하여 산화금속은 차세대 비휘발성 메모리로는 물론 다른 전기적 응용이 기대되는 물질임을 확인하게 되었다.

We have investigated the electrical properties of oxide metal thin film device. The device has been fabricated top-top electrode structure and its transport properties are measured in order to study the resistance change. Electrical properties with linear voltage sweep on a electrodes are used to show the variation of resistance of oxide metal thin film device. Fabricated oxide metal thin film device with MIM structure is changed from a low conductive Off-state to a high conductive On-state by the external linear voltage sweep. The $Si/SiO_2/MgO$ device is switched from a high resistance state to a low resistance state by forming. Consequently, we believe oxide metal is a promising material for a next-generation nonvolatile memory and other electrical applications.

키워드

참고문헌

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