References
- 최무희, 마대영, '초음파분무법으로 제조한 ZnO/ MgO막의 특성', 센서학회지, 제14권, 제5호, pp. 362-367, 2006
- 홍광준, '펄스 레이저 증착(PLD)법에 의한 ZnO 박 막 성장과 가전자대 갈라짐에 대한광전류 연구', 센서학회지, 제14권, 제3호, pp. 160-168, 2005
- I.S. Jeong, J.H. Kim, and S. Im, 'Ultraviolet- enhanced photodiode employing n-ZnO/p-Si structure', Appl. Phys. Lett., vol. 83, no. 14, pp. 2946-2948, 2003 https://doi.org/10.1063/1.1616663
- X. Zhang, X.M. Li, T.L. Chen, J.M. Bian, and C.Y. Zhang, 'Structural and optical properties of Zn1-xMgxO thin films deposited by ultrasonic spray pyrolysis', Thin Solid Films, vol. 492, pp. 248-252, 2005 https://doi.org/10.1016/j.tsf.2005.06.088
- Sunglae Cho, Jing Ma, Yunki Kim, Yi Sun, George K. L. Wong, and John B. Ketterson, 'Photolumine- scence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn', Appl. Phys. Lett., vol. 75, no. 18, pp. 2761-2763, 1999 https://doi.org/10.1063/1.125141
- H.S. Kang, J.S. Kang, S.S. Pang, E.S. Shim, and S.Y. Lee, 'Variation of light emitting properties of ZnO thin films depending on post-annealing temperature', Mater. Sci. Eng. B, vol. 102, pp. 313-316, 2003 https://doi.org/10.1016/S0921-5107(02)00730-4
- K. Vanheusden, C.H. Seager, W.L. Warren, D.R. Tallant, and J.a. Voigt, 'Correlation between photoluminescence and oxygen vacancies in ZnO phosphors', Appl. Phys. Lett., vol. 68, pp. 403-405, 1996 https://doi.org/10.1063/1.116699
- 최무희, 마대영, '초음파분무법으로 제조한 ZnO:Er 막의 UV 발광 특성', 센서학회지, 제16권, 제4호, pp. 307-312, 2007 https://doi.org/10.5369/JSST.2007.16.4.307
- M. Ishii, S. Komuro, T. Morikawa, and Y. Aoyagi, 'Local structure analysis of an optically active center in Er-doped ZnO thin film', J. Appl. Phys., vol. 89, pp. 3679-3684, 2001 https://doi.org/10.1063/1.1355284
-
Z. Zhou, T. Komori, M. Yoshino, and M. Morinaga, 'Enhanced 1.54
$\mu$ m photoluminescence from Er-contaning ZnO through nitrogen doping', Appl. Phys. Lett., vol. 86, pp. 041107-041109, 2005 https://doi.org/10.1063/1.1856692 - M. Ishii, Y. tanaka, and T. Ishikawa, 'Site-selective x-ray absorption fine structure analysis of an optically active center in Er-doped semiconductor thin film using x-ray-excited optical luminescence', Appl. Phys. Lett., vol. 78, pp. 183-185, 2001 https://doi.org/10.1063/1.1336546
- K. Takahei and A. Taguchi, 'Selective formation of an efficient Er-O luminescence center in GaAs by metalorganic chemical vapor deposition under an atmosphere containing oxygen', J. Appl. Phys., vol. 74, pp. 1979-1982, 1993 https://doi.org/10.1063/1.354757
- Shuji Komuro, Tooru Katsumata, Takitaro Morikawa, X. Zhao, H. Isshiki, and Y.Aoyagi, 'Room-temperature luminescence from erbium-doped silicon thin films prepared by laser ablation', Appl. Phys. Lett., vol. 69, pp. 3896-3899, 1996 https://doi.org/10.1063/1.117562
- K. Vanheusden, C.H. Seager, W.L. Warren, D.R. Tallant, and J.A. Voigt, 'Correlation between photoluminescence and oxygen vacancies in ZnO phosphors', Appl. Phys. Lett., vol. 68, pp. 403, 1996 https://doi.org/10.1063/1.116699
- H.S. Kang, J.S. Kang, S.S. Pang, E.S. Shim, and S.Y. Lee, 'Variation of light emitting properties of ZnO thin films depending on post-annealing temperature', Mater. Sci. Eng. B, vol. 102, pp. 313, 2003 https://doi.org/10.1016/S0921-5107(02)00730-4
- X.Q. Wei, 'Blue luminescent centers and microstructural evaluation by XPS and Raman in ZnO thin films annealed in vacuum, N2 and O2', Physics B 388, pp. 145-152, 2007 https://doi.org/10.1016/j.physb.2006.05.346