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Annealing effects of ZnO:Er films on UV emission

ZnO:Er막의 UV 발광에 미치는 열처리 효과

  • Choi, Mu-Hee (Department of Electrical Engineering and ERI, Gyeongsang National University) ;
  • Ma, Tae-Young (Department of Electrical Engineering and ERI, Gyeongsang National University)
  • 최무희 (경상대학교 전기공학과 및 경상대학교 공학연구원) ;
  • 마대영 (경상대학교 전기공학과 및 경상대학교 공학연구원)
  • Published : 2009.07.31

Abstract

Er-doped ZnO(ZnO:Er) films were deposited onto MgO wafers by ultrasonic spray pyrolysis at 550 $^{\circ}C$ varying the concentration of Er in the deposition source from 0.5 wt% to 3.0 wt%. Annealing of the films in a vacuum was carried out to increase the intensity of ultraviolet(UV) emission from the films. The annealing temperature was between 600$^{\circ}C$ and 800$^{\circ}C$. The crystallographic properties and surface morphology of the films were investigated by X-ray diffraction(XRD)and scanning electron microscope(SEM), respectively. The properties of photoluminescence(PL) for the films were investigated by the dependence of PL spectra on the annealing temperature. X-ray photoelectron spectroscopy(XPS) was conducted to find the composition change in the films by the annealing.

Keywords

References

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