센서학회지 (Journal of Sensor Science and Technology)

  • 제18권3호
  • /
  • Pages.222-225
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  • 2009
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  • 1225-5475(pISSN)
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  • 2093-7563(eISSN)
한국센서학회 (The Korean Sensors Society)
권호 표지
DOI QR코드

DOI QR Code

Pd/다결정 3C-SiC 쇼트키 다이오드형 수소센서의 제작과 그 특성

Fabrication of a Pd/poly 3C-SiC Schottky diode hydrogensensor and its characteristics

  • 정귀상 (울산대학교 전기전자정보시스템공학부) ;
  • 안정학 (울산대학교 전기전자정보시스템공학부)
  • 발행 : 2009.05.31
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초록

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C-SiC thin films grown on Si substrates with thermal oxide layer using APCVD. Pd/poly 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about 400 $^{\circ}$. The characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate, and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature $H_2$ sensor applications.

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참고문헌

  1. K. S. Kim and G. S. Chung, 'Mechanical properties of poly crystalline 3C-SiC thin films with various doping concentrations', J. Kor. Sensors Soc., vol. 17, no. 4, pp. 256-260, 2008 https://doi.org/10.5369/JSST.2008.17.4.256
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피인용 문헌

  1. Hydrogen sensor of SWNT-PdOxsystem using the vacuum filtering deposition method vol.19, pp.2, 2010, https://doi.org/10.5369/JSST.2010.19.2.087