참고문헌
- K. K. Likharev, 'Layered tunnel barriers for nonvolatile memory devices', Appl. Phys. Lett., Vol. 73, p. 2137, 1998 https://doi.org/10.1063/1.122402
- B. Govoreanu, P. Blomme, M. Rosmeulen, J. Van Houdt, and K. De Meyer, 'VARIOT: a novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices', IEEE Electron Device Lett., Vol. 24, p. 99, 2003 https://doi.org/10.1109/LED.2002.807694
-
J. Buckley, B. De Salvo, G. Ghibaudo, M. Gely, J. F. Damlencourt, F. Martin, G. Nicotra, and S. Deleonibus, 'Investigation of
$SiO_2/HfO_2$ gate stacks for application to non-volatile memory devices', Solid-State Electron., Vol. 49, p. 1833, 2005 https://doi.org/10.1016/j.sse.2005.10.005 -
J. J. Lee, X. Wang, W. Bai, N. Lu, and D. L. Kwong, 'Theoretical and experimental investigation of Si nanocrystal memory device with
$HfO_2$ high-k tunneling dielectric', IEEE Trans. Electron Devices, Vol. 50, p. 2067, 2003 https://doi.org/10.1109/TED.2003.816107 -
M. Lenzlinger and E. H. Snow, 'Fowler- nordheim tunneling into thermally grown
$Si0_{2$ ', J. Appl. Phys., Vol. 40, p. 278, 1969 https://doi.org/10.1063/1.1657043 -
Z. A. Weinberg, W. C. Johnson, and M. A. Lampert, 'High-field transport in
$Si0_{2$ on silicon induced by corona charging of the unmetallized surface', J. Appl. Phys., Vol. 47, p. 248, 1976 https://doi.org/10.1063/1.322307 - Z. A. Weinberg, 'On tunneling in metal- oxide- silicon structures', J. Appl. Phys., Vol. 53, p. 5052, 1982 https://doi.org/10.1063/1.331336
- D A. Neamen, 'Semiconductor physics and devices: Basic principles", 3rd ed. McGraw- Hill, p. 713, 2003
- R. S. Muller and T. I. Kamins, 'Device Electronics for Integrated Circuits', 2nd ed. New York: Wiley, p. 380, 1986