Transactions on Electrical and Electronic Materials

  • 제10권1호
  • /
  • Pages.24-27
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  • 2009
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Analysis of Photoluminescence for N-doped and undoped p-type ZnO Thin Films Fabricated by RF Magnetron Sputtering Method

  • Liu, Yan-Yan (School of Electrical Electronic and Information Engineering, Wonkwang University, WRISS) ;
  • Jin, Hu-Jie (School of Electrical Electronic and Information Engineering, Wonkwang University, WRISS) ;
  • Park, Choon-Bae (School of Electrical Electronic and Information Engineering, Wonkwang University, WRISS) ;
  • Hoang, Geun C. (Department of Semiconductor and Display, Wonkwang University, WRISS)
  • 발행 : 2009.02.28
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초록

N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at $800^{\circ}C$ for 5 minutes in ambient of $O_2$ with pressure of 10Torr. X -ray diffraction shows that the homo-buffer layer is beneficial to the crystalline of N-doped ZnO thin films and all films have preferable c-axis orientation. Atomic force microscopy shows that undoped ZnO thin film grown on homo-buffer layer has an evident improvement of smoothness compared with N-dope ZnO thin films. Hall-effect measurements show that all ZnO films annealed at $800^{\circ}C$ possess p-type conductivities. The undoped ZnO film has the highest carrier concentration of $1.145{\times}10^{17}cm{-3}$. The photoluminescence spectra show the emissions related to FE, DAP and many defects such as $V_{Zn}$, $Zn_O$, $O_i$ and $O_{Zn}$. The p-type defects ($O_i$, $V_{Zn}$, and $O_{Zn}$) are dominant. The undoped ZnO thin film has a better p-type conductivity compared with N-doped ZnO thin film.

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