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Uniaxial Magnetic Anistotropy of a NiO-Spin Valve Device

  • Lee, Won-Hyung (Department of Electrical Engineering, Freshman, The Pennsylvania State University) ;
  • Hwang, Do-Guwn (Department of Oriental Biomedical Engineering, Sangji University) ;
  • Lee, Sang-Suk (Department of Oriental Biomedical Engineering, Sangji University)
  • 발행 : 2009.03.31

초록

The shape anisotropy effect of a giant magnetoresistance-spin valves (GMR-SV) device with a glass/NiO/NiFe/CoFe/Cu/CoFe/NiFe layered structure for use in the detection of magnetic property of molecules within a cell was investigated. The patterned device was given uniaxial anisotropy during the sputtering deposition and vacuum post-annealing, which was performed at $200^{\circ}C$ under a 300 Oe magnetic field. The pattern size of the device, which was prepared through the photolithography process, was $2{\times}15\;{\mu}m^2$. The experimental results confirmed that the best design for a GMR-SV device to be used as a biosensor is to have both the axis sensing current and the easy axis of the pinned NiO/NiFe/CoFe triple layer oriented in the direction of the device's width, while the easy axis of the free CoFe/NiFe bilayer should be pointed along the long axis of the device.

키워드

참고문헌

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  7. Inverse Magnetoresistance Characteristic of Hybrid-Type Multilayer Structure of IrMn-Based Giant-Magnetoresistance Spin Valve and High-Tc Superconductor YBa2Cu3O7−x Film pp.1543-186X, 2018, https://doi.org/10.1007/s11664-018-6659-x
  8. Use of a GMR-SV Device Below a Single Coil and Channel to Detect the Deformation Properties of Red Blood Cell Membranes pp.1543-186X, 2019, https://doi.org/10.1007/s11664-018-6617-7