Journal of Surface Science and Engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Dry Etch Characteristics of TiN Thin Film for Metal Gate Electrode

Metal 게이트 전극을 위한 TiN 박막의 건식 식각 특성

  • Um, Doo-Seung (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Park, Jung-Soo (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
  • 엄두승 (중앙대학교 전자전기공학부) ;
  • 우종창 (중앙대학교 전자전기공학부) ;
  • 박정수 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • Published : 2009.08.31
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Abstract

We investigated the dry-etching mechanism of the TiN thin film using a $Cl_2$/Ar inductively coupled plasma system. To understand the effect of the $Cl_2$/Ar gas mixing ratio, we etched the TiN thin film by varying $Cl_2$/Ar gas mixing ratio. When the gas mixing ratio was 100% $Cl_2$, the highest etch rate was obtained. The chemical reaction on the surface was investigated with X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to examine etched profiles of the TiN thin film.

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References

  1. M. Wittmer, Appl. Phys. Lett., 35 (1980) 456
  2. S. Ikeda, J. Palleau, J. Torres, B. Chenevier, N. Bourhila, R. Madar, J. Appl. Phys., 86 (1999) 2300 https://doi.org/10.1063/1.371045
  3. J. E. Sundgren, Thin Solid Films, 128 (1985) 21 https://doi.org/10.1016/0040-6090(85)90333-5
  4. H. K. Chiu, T. L. Lin, Y. Hu, K. C. Leou, H. C. Lin, M. S. Tasi, T. Y. Huang, J. Vac. Sci. Technol, A, 19(2) (2001) 445
  5. K. E. Elers, V. Saanila, P. J. Soininen, W. M. Li, J. T. Kostamo, S. Haukka, J. Juhannoja, W. F. A. Besling, Chem. Vap. Deposition, 8(4) (2002) 149 https://doi.org/10.1002/1521-3862(20020704)8:4<149::AID-CVDE149>3.0.CO;2-F
  6. J. Tonotani, T. Iwamoto, F. Sato, K. Hattori, S. Ohmi, H. Iwai, J. Vac. Sci. Technol. B, 21(5) (2003) 2163 https://doi.org/10.1116/1.1612517
  7. S. K. Rha, W. J. Lee, S. Y. Lee, Y. S. Hwang, Y. J. Lee, D. I. Kim, D. W. Kim, S. S. Chun, C. O. Park, Thin Solid Films, 320 (1998) 134 https://doi.org/10.1016/S0040-6090(97)01077-8
  8. H. Kim, C. Cabral, Jr., C. Lavoie, S. M. Rossnagel, J. Vac. Sci. Technol. B, 20(4) (2002) 1321 https://doi.org/10.1116/1.1486233
  9. K. Nakamura, T. Kitagawa, K. Osari, K. Takahashi, K. Ono, Vacuum, 80 (2006) 761 https://doi.org/10.1016/j.vacuum.2005.11.017
  10. J. W. Coburn, H. F. Winters, J. Vac. Sci. Technol., 16(2) (1979) 391 https://doi.org/10.1116/1.569958
  11. W. S. Hwang, J. Chen, W. J. Yoo, V. Bliznetsov, J. Vac. Sci. Technol. A, 23(4) (2005) 964 https://doi.org/10.1116/1.1927536
  12. N. K. Min, M. Kim, K. H. Kwon, A. Efremov, H. W. Lee, S. Kim, J. Korean Phys. Soc., 51(5) (2007) 1686 https://doi.org/10.3938/jkps.51.1686
  13. M. H. Shin, S. W. Na, N. E. Lee, J. H. Ahn, Thin Solid Films, 506-507 (2006) 230 https://doi.org/10.1016/j.tsf.2005.08.019
  14. A. L. Gouil, O. Joubert, G. Cunge, T. Chevolleau, L. Vallier, B. Chenevier, I. Matko, J. Vac. Sci. Technol. B, 25(3) (2007) 767 https://doi.org/10.1116/1.2732736