대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

정전 용량형 SP4T RF MEMS 스위치 구동용 4채널 승압 DC-DC 컨버터

Four Channel Step Up DC-DC Converter for Capacitive SP4T RF MEMS Switch Application

  • 장연수 (서울대학교 전기컴퓨터공학부, 반도체공동연구소) ;
  • 김현철 (울산대학교 전기전자정보시스템공학부) ;
  • 김수환 (서울대학교 전기컴퓨터공학부, 반도체공동연구소) ;
  • 전국진 (서울대학교 전기컴퓨터공학부, 반도체공동연구소)
  • Jang, Yeon-Su (School of Electrical Engineering and Computer Science, Seoul National University, Inter-university Semiconductor Research Center) ;
  • Kim, Hyeon-Cheol (School of Electrical Engineering, Ulsan University) ;
  • Kim, Su-Hwan (School of Electrical Engineering and Computer Science, Seoul National University, Inter-university Semiconductor Research Center) ;
  • Chun, Kuk-Jin (School of Electrical Engineering and Computer Science, Seoul National University, Inter-university Semiconductor Research Center)
  • 발행 : 2009.02.25
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⟨ 이전 논문 다음 논문 ⟩

초록

본 논문에서는 전하 펌프(charge pimp) 방식의 전압 더블러(voltage doubler) 구조를 이용한 4채널 DC-DC 컨버터 개발을 소개한다. 무선 통신 트랜시버 내부에 위치하는 FEM(Front End Module)에서의 사용을 목표로 연구 개발 중인 정전 용량형 SP4T RF MEMS 스위치 구동용 DC-DC 컨버터를 개발하였다. 소비 전력이 적으며 작은 면적을 차지하는 전하 펌프 구조와 10MHz 스위칭 주파수를 이용하여 3.3V에서 $11.3{\pm}0.1V$, $12.4{\pm}0.1V$, $14.1{\pm}0.2V$로 승압한다. 전압 레벨 변환기(Voltage level shifter)를 이용하여 DC-DC 컨버터의 출력을 3.3V 신호로 선택적으로 온오프(on/off) 할 수 있으며 정전 용량형 MEMS 기기에 선택적으로 전달할 수 있도록 구현하였다. 칩 외부에 수동 소자를 추가하지 않고 칩 내부에 CMOS 공정 중에 제작된 저항과 커패시터만으로 원하는 출력을 낼 수 있도록 설계하였다. 전체 칩의 크기는 패드를 포함하여 $2.8{\times}2.1mm^2$이며 소비 전력은 7.52mW, 7.82mW, 8.61mW이다.

This paper presents a step up four channel DC-DC converter using charge pump voltage doubler structure. Our goal is to design and implement DC-DC converter for capacitive SP4T RF MEMS switch in front end module in wireless transceiver system. Charge pump structure is small and consume low power 3.3V input voltage is boosted by DC-DC Converter to $11.3{\pm}0.1V$, $12.4{\pm}0.1V$, $14.1{\pm}0.2V$ output voltage With 10MHz switching frequency. By using voltage level shifter structure, output of DC-DC converter is selected by 3.3V four channel selection signals and transferred to capacitive MEMS devices. External passive devices are not used for driving DC-DC converter. The total chip area is $2.8{\times}2.1mm^2$ including pads and the power consumption is 7.52mW, 7.82mW, 8.61mW.

키워드

참고문헌

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