References
- D. C. Kwon, N. S. Yoon, J. H. Han, and J. W. Shon, Current Appl. phys. 9(2), pp. 546-550 (2009) https://doi.org/10.1016/j.cap.2008.03.022
- Hideshi Nomura, Kelichi Akimoto, Akihiro Kono, and Toshio Goto, J. Phys. D: Appl. Phys. 28 (1995)
- N. S. Yoon, S. M. Hwang, and D. I. Choi, Phys. Rev. E, 55, 7536 (1997) https://doi.org/10.1103/PhysRevE.55.7536
- 정봉삼, 윤남식, 한국진공학회지, 제 17권 5호, pp. 419-425 (2008) https://doi.org/10.5757/JKVS.2008.17.5.419
- N. S. Yoon, S. S. Kim, C. S. Chang, and Duk-In Choi, J. Korean Phys Soc. 28, 2, pp. 172(1995)
- S. S. Kim, S. Hamaguchi, N. S. Yoon, C. S. Chang, Y. D. Lee, and S. H. Ku, Physics of Plasmas, 8, 1384(2001) https://doi.org/10.1063/1.1350671
- E. Meeks, R. S. Larson, P. Ho, S. M. Han, E. Edelberg, and E. S. Aydil, J. Vac. Sci. Technol. A 16(2), 544, (1998) https://doi.org/10.1116/1.581096
- M. Kushner, J. Appl. Phys. 63(8), 2532, (1988) https://doi.org/10.1063/1.340989
- K. D. Bleecker, D. Herrebout, A. Bogaerts, G. Gijbels, and P. Dscamps, J. Phys. D: Appl. Phys. 36, 1826, (2003) https://doi.org/10.1088/0022-3727/36/15/313
- G. J. Niehuis, W. J. Goedheer, E. A. G. Hans, W. G. J. H. M. van Sark, and J. Bezemer, J. Appl. Phys. 82(5), 2060 (1997) https://doi.org/10.1063/1.366016
- J. Perrin, O. Leroy, and M. C. Bordage, Contrib. Plasma Phys. 36, 3 (1996) https://doi.org/10.1002/ctpp.2150360102
- J. L. Giuliani et al., IEEE Trans. Plasma Sci. 27(5), 1317 (1999) https://doi.org/10.1109/27.799808
- 배상현, 권득철, 윤남식, 한국진공학회지, 제 17권 5호, pp. 426-434 (2008) https://doi.org/10.5757/JKVS.2008.17.5.426
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