한국전자파학회논문지 (The Journal of Korean Institute of Electromagnetic Engineering and Science)

  • 제20권1호
  • /
  • Pages.12-20
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  • 2009
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  • 1226-3133(pISSN)
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  • 2288-226X(eISSN)
한국전자파학회 (The Korean Institute of Electromagnetic Engineering and Science)
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측정을 통한 PIN 다이오드 대신호 모델 구축 기법

A Technique of Large Signal Modeling of PIN Diode through Measurements

  • Yang, Seong-Sik (Department of Radio Science and Engineering, Chungnam National University) ;
  • Yeom, Kyung-Whan (Department of Radio Science and Engineering, Chungnam National University)
  • 발행 : 2009.01.31
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⟨ 이전 논문 다음 논문 ⟩

초록

본 논문에서는 PIN 다이오드 대신호 모델을 제시하였고, 대신호 모델의 각 파라미터 측정 방법을 보였다. 이 파라미터들을 일정한 값을 가지는 소자와 다이오드 접합(junction) 전압에 의존하는 소자로 분류하고, ADS(Advanced Designed System)에서 일정한 값을 가지는 소자는 집중소자로, 접합 전압에 의존하는 소자는 SDD(Symbolically Defined Devices)로 구현하였다. 이렇게 구현된 PIN 다이오드 대신호 모델은 간단한 DC, AC 및 S-파라미터 시뮬레이션뿐만 아니라 Transient 및 HB(Harmonic Balance) 시뮬레이션도 가능하다. 본 논문에서 제시한 PIN 다이오드 대신호 모델의 타당성을 보이기 위해서 감쇄기 및 리미터의 측정값이 제시한 PIN 다이오드 모델 시뮬레이션 결과와 일치함을 보였다.

In this paper, we introduced the large signal model of a PIN diode and presented the measurement methods for each parameter of the large signal model. The elements of the PIN diode model are classified into the elements with a constant value and the elements depending on the junction voltage. We implemented the constant elements by lumped elements and the voltage-dependent elements by a SDD in ADS. The developed large signal model was successfully worked with various circuit simulations, such as simple DC, AC, S-parameter, Transient, and HB simulations. In order to verify the developed large signal model, we compared that the measured results of a limiter and a attenuator with the simulated results using the PIN diode model, which are in good agreement.

키워드

참고문헌

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