한국진공학회지 (Journal of the Korean Vacuum Society)

한국진공학회 (The Korean Vacuum Society)
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투명전자소자를 위한 HfO2계 투명 MIM 커패시터 특성연구

Characteristics of Transparent Mim Capacitor using HfO2 System for Transparent Electronic Device

  • 조영제 (국립순천대학교 미래전략신소재공학과) ;
  • 이지면 (국립순천대학교 미래전략신소재공학과) ;
  • 곽준섭 (국립순천대학교 미래전략신소재공학과)
  • Jo, Young-Je (Department of Materials Science and Metallurgical Engineering, Sunchon National) ;
  • Lee, Ji-Myon (Department of Materials Science and Metallurgical Engineering, Sunchon National) ;
  • Kwak, Joon-Seop (Department of Materials Science and Metallurgical Engineering, Sunchon National)
  • 발행 : 2009.01.30
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초록

투명 전자소자의 고유전 $HfO_2$ 절연막을 개발하기 위하여, ITO/$HfO_2$/ITO 금속-절연체-금속 (Metal-Insulator-Metal, MIM) 커패시터 구조를 형성한후 $HfO_2$ 박막의 두께에 따른 전기적, 광학적, 구조적 특성의 변화를 연구하였다. $HfO_2$ 박막의 두께가 50 nm에서 300 nm로 증가함에 따라 유전상수는 20에서 10이하로 감소하였으나, $HfO_2$ 두께가 증가함에 따라 누설전류는 감소하여 200 nm 이상의 두께에서는 $2.7{\times}10^{-12}\;A/cm^2$ 이하의 낮은 누설전류 특성을 나타내었다. ITO/$HfO_2$/ITO MIM 커패시터의 $HfO_2$ 박막의 두께가 50 nm에서 300 nm로 증가함에 따라 투과율은 감소하였으나 300 nm 두께에서도 가시광선 영역에서 80% 이상의 투과율을 나타내어 우수한 투과도 특성을 나타내었다.

The effects of $HfO_2$ film thickness on electrical, optical, and structural properties were investigated. We fabricated ITO/$HfO_2$/ITO metal-insulator- metal (MIM) capacitor using transparent conducting oxide. When $HfO_2$ film thickness increase from 50 nm to 300 nm, dielectric constant of $HfO_2$ was decreased from 20.87 to 9.72. The transparent capacitor shows an overall high performance, such as a dielectric constant about 21 by measuring the ITO/$HfO_2$/ITO capacitor structures and a low leakage current of $2.75{\times}10^{-12}\;A/cm^2$ at +5 V. Transmittance above 80% was observed in visible region.

키워드

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