플래시 메모리를 위한 효율적인 선반입과 비동기 쓰기 기법

Efficient Prefetching and Asynchronous Writing for Flash Memory

  • 발행 : 2009.02.15

초록

휴대용 저장장치로 각광 받고 있는 NAND 플래시 메모리의 용량이 커지면서 기존의 파일시스템과 플래시 메모리 컨트롤러 간의 중간 매개체 역할을 해주는 FTL(Flash Translation Layer)의 주소 변환 및 수명 관리 기법이 점차 중요해지고 있다. 본 논문에서는 연속적인 논리 주소 요청이 물리 주소가 인접한 경우의 값을 기록하는 연속성 카운터를 제안하여 주소 변환 횟수를 감소 시켰으며 이와 함께 자주 쓰이는 주소의 페이지들을 미리 주 메모리에 선반입하여 플래시 메모리의 입출력 성능을 향상시켰다. 또한 쓰기 빈도가 높은 주소를 예측하고 잦은 쓰기를 방지하기 위해 2비트 쓰기 예측과 비동기 쓰기 기법을 제시하여 쓰기 성능과 플래시 메모리의 수명을 향상 시켰다. 실험 결과 본 논문에서 제안하는 CFTL(Clustered Flash Translation Layer)이 기존 FTL들보다 주소 변환 성능이 최대 20%, 쓰기 시간을 최대 50% 이상 감소시켰다.

According to the size of NAND flash memory as the storage system of mobile device becomes large, the performance of address translation and life cycle management in FTL (Flash Translation Layer) to interact with file system becomes very important. In this paper, we propose the continuity counters, which represent the number of continuous physical blocks whose logical addresses are consecutive, to reduce the number of address translation. Furthermore we propose the prefetching method which preloads frequently accessed pages into main memory to enhance I/O performance of flash memory. Besides, we use the 2-bit write prediction and asynchronous writing method to predict addresses repeatedly referenced from host and prevent from writing overhead. The experiments show that the proposed method improves the I/O performance and extends the life cycle of flash memory. As a result, proposed CFTL (Clustered Flash Translation Layer)'s performance of address translation is faster 20% than conventional FTLs. Furthermore, CFTL is reduced about 50% writing time than that of conventional FTLs.

키워드

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