센서학회지 (Journal of Sensor Science and Technology)

  • 제18권1호
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  • Pages.77-85
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  • 2009
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  • 1225-5475(pISSN)
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  • 2093-7563(eISSN)
한국센서학회 (The Korean Sensors Society)
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넓은 동적 범위를 가지는 CMOS Image Sensors OFD(Over Flow Drain) 픽셀 설계

OFD(Over Flow Drain) pixel architecture design of the CIS which has wide dynamic range with a CMOS process

  • 발행 : 2009.01.31
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초록

We propose a new image pixel architecture which has OFD(Over Flow Device) node by improving conventional 3TR pixel structure. Newly designed pixel consists of photo diode which is verified with HSPICE simulation, PMOS reset transistor, several NMOS and several PMOS transistors. Photodiode signals from each PMOS and NMOS are detected by Reset PMOS. These output signals give enough chances to detect wide operation coverage because OFD node has overflow photocurrent. According to various light intensity, we analyzed characteristic of the output voltage with a SPICE tool. Proposed pixel output has specific value which can detect possible from $0.1{\mu}W/cm^2$ to $10W/cm^2$ light intensity. It has wide-dynamic range of 160 dB.

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참고문헌

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