대한금속재료학회지 (Korean Journal of Metals and Materials)

  • 제46권5호
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  • Pages.310-314
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  • 2008
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  • 1738-8228(pISSN)
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  • 2288-8241(eISSN)
대한금속재료학회 (The Korean Institute of Metals and Materials)
권호 표지

플립칩 Sn-3.5Ag 솔더범프의 Electromigration과 Thermomigration 특성

Electromigration and Thermomigration Characteristics in Flip Chip Sn-3.5Ag Solder Bump

  • Lee, Jang-Hee (Andong National University, School of Materials Science and Engineering) ;
  • Lim, Gi-Tae (Andong National University, School of Materials Science and Engineering) ;
  • Yang, Seung-Taek (Package R&D Division, Hynix Semiconductor Inc.) ;
  • Suh, Min-Suk (Package R&D Division, Hynix Semiconductor Inc.) ;
  • Chung, Qwan-Ho (Package R&D Division, Hynix Semiconductor Inc) ;
  • Byun, Kwang-Yoo (Package R&D Division, Hynix Semiconductor Inc.) ;
  • Park, Young-Bae (Andong National University, School of Materials Science and Engineering)
  • 투고 : 2007.12.12
  • 발행 : 2008.05.22
⟨ 이전 논문 다음 논문 ⟩

초록

Electromigration test of flip chip solder bump is performed at $140^{\circ}C$ C and $4.6{\times}10^4A/cm^2$ conditions in order to compare electromigration with thermomigration behaviors by using electroplated Sn-3.5Ag solder bump with Cu under-bump-metallurgy. As a result of measuring resistance with stressing time, failure mechanism of solder bump was evaluated to have four steps by the fail time. Discrete steps of resistance change during electromigration test are directly compared with microstructural evolution of cross-sectioned solder bump at each step. Thermal gradient in solder bump is very high and the contribution of thermomigration to atomic flux is comparable with pure electromigration effect.

키워드

과제정보

연구 과제 주관 기관 : 지식경제부

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