한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제21권9호
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  • Pages.844-847
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  • 2008
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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비정질 실리콘 TFT의 광누설 전류에 Backlight 광원의 광학적 특성이 미치는 영향에 대한 연구

A Study on the Effects of the Optical Characteristics of Backlight Sources on the Photo Leakage Currents of a-Si:H Thin Film Transistor

  • 발행 : 2008.09.01
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초록

The photo leakage currents of a conventional hydrogenated amorphous silicon(a-Si:H) thin film transistor(TFT) were investigated and analyzed in case of illumination from various light sources such as halogen lamp, cold cathode fluorescent lamp(CCFL) backlight, and white light emitting diode(LED) backlight. The photo leakage characteristics showed the apparent differences in the leakage level and in the $I_{on}/I_{off}$ ratio in spite of the similar luminances of light sources. This leakage level is expected to be related to the wavelength of the lowest intensity peak from the spectral characteristics of light sources.

키워드

참고문헌

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피인용 문헌

  1. A Study on the Photon Energy Spectrums of Backlight for the Analysis of the Photoelectric Characteristics of a-Si:H TFT vol.22, pp.12, 2009, https://doi.org/10.4313/JKEM.2009.22.12.1058