Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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On the Etching Mechanism of Parylene-C in Inductively Coupled O2 Plasma

  • Shutov, D.A. (Department of Electronic Devices & Materials Technology, Ivanovo State University of Chemistry & Technology) ;
  • Kim, Sung-Ihl (Department of IT Electronics Engineering, Daejeon University) ;
  • Kwon, Kwang-Ho (Department of Control and Instrumentation Engineering, Korea University)
  • Published : 2008.08.31
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Abstract

We report results on a study of inductively coupled plasma (ICP) etching of Parylene-C (poly-monochloro-para-xylylene) films using an $O_2$ gas. Effects of process parameters on etch rates were investigated and are discussed in this article from the standpoint of plasma parameter measurements, performed using a Langmuir probe and modeling calculation. Process parameters of interest include ICP source power and pressure. It was shown that major etching agent of polymer films was oxygen atoms O($^3P$). At the same time it was proposed that positive ions were not effective etchant, but ions played an important role as effective channel of energy transfer from plasma towards the polymer.

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References

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