Contact Resistance Analysis of High-Sheet-Resistance-Emitter Silicon Solar Cells

고면저항 에미터 결정질 실리콘 태양전지의 전면전극 접촉저항 분석

  • 안준용 (LG 전자 Solar Cell 사업팀 R&D 그룹) ;
  • 정주화 (LG 전자 Solar Cell 사업팀 R&D 그룹) ;
  • 도영구 (LG 전자 Solar Cell 사업팀 R&D 그룹) ;
  • 김민서 (LG 화학/기술연구원 CRD 연구소 나노센터) ;
  • 정지원 (LG 전자 Solar Cell 사업팀 R&D 그룹)
  • Published : 2008.06.25

Abstract

To improve the blue responses of screen-printed single crystalline silicon solar cells, we investigated an emitter etch-back technique to obtain high emitter sheet resistances, where the defective dead layer on the emitter surface was etched and became thinner as the etch-back time increased, resulting in the monotonous increase of short circuit current and open circuit voltage. We found that an optimal etch-back time should be determined to achieve the maximal performance enhancement because of fill factor decrease due to a series resistance increment mainly affected by contact and lateral resistance in this case. To elucidate the reason for the fill factor decrease, we studied the resistance analysis by potential mapping to determine the contact and the lateral series resistance. As a result, we found that the fill factor decrease was attributed to the relatively fast increase of contact resistance due to the dead layer thinning down with the lowest contact resistivity when the emitter was contacted with screen-printed silver electrode.

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