• 제목/요약/키워드: 고면저항 에미터

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고면저항 에미터 결정질 실리콘 태양전지의 전면전극 접촉저항 분석 (Contact Resistance Analysis of High-Sheet-Resistance-Emitter Silicon Solar Cells)

  • 안준용;정주화;도영구;김민서;정지원
    • 신재생에너지
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    • 제4권2호
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    • pp.74-80
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    • 2008
  • To improve the blue responses of screen-printed single crystalline silicon solar cells, we investigated an emitter etch-back technique to obtain high emitter sheet resistances, where the defective dead layer on the emitter surface was etched and became thinner as the etch-back time increased, resulting in the monotonous increase of short circuit current and open circuit voltage. We found that an optimal etch-back time should be determined to achieve the maximal performance enhancement because of fill factor decrease due to a series resistance increment mainly affected by contact and lateral resistance in this case. To elucidate the reason for the fill factor decrease, we studied the resistance analysis by potential mapping to determine the contact and the lateral series resistance. As a result, we found that the fill factor decrease was attributed to the relatively fast increase of contact resistance due to the dead layer thinning down with the lowest contact resistivity when the emitter was contacted with screen-printed silver electrode.

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고면저항 에미터 결정질 실리콘 태양전지의 전면전극 접촉저항 분석 (CONTACT RESISTANCE ANALYSIS OF HIGH-SHEET-RESISTANCE-EMITTER SILICON SOLAR CELLS)

  • 안준용;정주화;도영구;김민서;정지원
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2008년도 춘계학술대회 논문집
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    • pp.390-393
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    • 2008
  • To improve the blue responses of screen-printed single crystalline silicon solar cells, we investigated an emitter etch-back technique to obtain high emitter sheet resistances, where the defective dead layer on the emitter surface was etched and became thinner as the etch-back time increased, resulting in the monotonous increase of short circuit current and open circuit voltage. We found that an optimal etch-back time should be determined to achieve the maximal performance enhancement because of fill factor decrease due to a series resistance increment mainly affected by contact and lateral resistance in this case. To elucidate the reason for the fill factor decrease, we studied the resistance analysis by potential mapping to determine the contact and the lateral series resistance. As a result, we found that the fill factor decrease was attributed to the relatively fast increase of contact resistance due to the dead layer thinning down with the lowest contact resistivity when the emitter was contacted with screen-printed silver electrode.

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