References
- J. U. Seo, C. Y. Kim, H. S. Kim, and S. J. Noh, J. Kor. Vac. Soc. 12, 235 (2003)
- M. D. Bremser, W. G. Perry, T. Zheleva, N. V. Edwards, O. H. Nam, N. Parikh, D. E. Aspnes, and R. F. Daviset, J. Nitr. Semi. Res. 1, 8 (1996)
- D. Brunner, H. Angerer, E. Bustarret, F. Freudenberg, R. Hopler, R. Dimitrov, O. Ambacher, and M. Stutzmann, J. Appl. Phys. 82, 5090 (1997) https://doi.org/10.1063/1.366309
- K. Osamura, S. Naka, and Y. Murakami, J. Appl. Phys. 46, 3432 (1975) https://doi.org/10.1063/1.322064
- Q. Guo, H. Ogawa, and A. Yoshida, Crystal Growth 146, 462 (1995) https://doi.org/10.1016/0022-0248(94)00464-1
- K. S. Kim, A. Saxler, P. Kung, M. Razeghi, and K. Y. Lim, Appl. Phys. Lett. 71, 800 (1997) https://doi.org/10.1063/1.119650
- Y. J. Koide, H. Itoh, M. R. H. Khan, K. Hiramatu, N. Sawaki, and I. Akasaki, J. Appl. Phys. 61, 4540(1987) https://doi.org/10.1063/1.338387
- S. J. Lee, J. O. Kim, C. S. Kim, S. K. Noh, and K. Y. Lim, J. Kor. Vac. Soc. 16, 27 (2007) https://doi.org/10.5757/JKVS.2007.16.1.027
- Y. Kim, J. Kor. Vac. Soc. 16, 210 (2007) https://doi.org/10.5757/JKVS.2007.16.3.210
- Y. Kawakami, Y. Narukawa, K. Omae, Sg. Fujita, and S. Nakamura, Phys. Status Solidi A 178, 331 (2000) https://doi.org/10.1002/1521-396X(200003)178:1<331::AID-PSSA331>3.0.CO;2-9
- T. Nishida, H. Saito, and N. Kobayashi, Appl. Phys. Lett. 79, 711 (2001) https://doi.org/10.1063/1.1390485
- O. Shmatov and Z.S. Li, IEE Proc.-Optoelectron. 150, 3, 273 (2003)
- M. R. Krames, M. Ochiai-Holcomb, G. E. Hofler, C. Carter-Coman, E. I.. Chen, I. H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, Appl. Phys. Lett. 75, 2365 (1999) https://doi.org/10.1063/1.125016
- Y. C. Yoo, I. K. Han, and J. I. Lee, J. Kor. Vac. Soc. 16, 353 (2007) https://doi.org/10.5757/JKVS.2007.16.5.353
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 84, 855 (2004) https://doi.org/10.1063/1.1645992
- H. W. Choi, M. D. Dawson, P. R. Edwards, and R. W. Martin, Appl. Phys. Lett. 83, 4483 (2003) https://doi.org/10.1063/1.1630352
- C. C. Sun, C. Y. Lin, T. X. Lee, and T. H. Yang, Opt. Eng. 43, 1700 (2004) https://doi.org/10.1117/1.1768943
- J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O'Shea, M. J. Ludowise, G. Christenson, Y. C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Gotz, N. F. Gardner, R. S. Kern, and S. A. Stockman, Appl. Phys. Lett. 78, 3379 (2001) https://doi.org/10.1063/1.1374499
- J. B. Lee, S. H. Yoon, D. W Kim, and C. H. Choi, 전자공학회논문지 44(SD4), 91 (2007)
- D. J. Kim and C. Huh, Proc. KIEE. 48, 10 (1999)
Cited by
- Growth of AlN Thin Film on Sapphire Substrates and ZnO Templates by RF-magnetron Sputtering vol.19, pp.1, 2010, https://doi.org/10.5757/JKVS.2010.19.1.058