Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Current Conduction Model of Depletion-Mode N-type Nanowire Field-Effect Transistors (NWFETS)

공핍 모드 N형 나노선 전계효과 트랜지스터의 전류 전도 모델

  • Yu, Yun-Seop (Department of Information & Control Engineering and Electronic Technology Institute, Hankyong National University) ;
  • Kim, Han-Jung (Department of Information & Control Engineering and Electronic Technology Institute, Hankyong National University)
  • 유윤섭 (한경대학교 정보제어공학과, 전자종합기술연구소) ;
  • 김한정 (한경대학교 정보제어공학과, 전자종합기술연구소)
  • Published : 2008.04.25
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Abstract

This paper introduces a compact analytical current conduction model of long-channel depletion-mode n-type nanowire field-effect transistors (NWFETs). The NWFET used in this work was fabricated with the bottom-up process and it has a bottom-gate structure. The model includes all current conduction mechanisms of the NWFET operating at various bias conditions. The results simulated from the newly developed NWFET model reproduce a reported experimental results within a 10% error.

본 논문은 효율적인 회로 시뮬레이션을 위한 긴 채널 공핍 모드 n형 나노선 전계효과트랜지스터(nanowire field-effect transistor: NWFET)의 간단한 해석적 전류 전도 모델을 소개한다. 본 연구에서 사용된 NWFET는 bottom-up 방식으로 제작되었으며 게이트가 채널의 아래에 존재하는 구조를 가진다. 이 모델은 다양한 바이어스 조건에서 동작하는 NWFET의 모든 전류 전도 메카니즘을 포함한다. 새롭게 개발된 NWFET 모델로 계산된 결과는 이전에 발표된 NWFET 실험 데이터와 비교할 때 10% 오차범위 안에서 서로 일치한다.

Keywords

References

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