Transactions on Electrical and Electronic Materials

  • 제9권1호
  • /
  • Pages.24-27
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  • 2008
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Electrical and Optical Properties of p-type ZnO:P Fabricated by Ampoule-tube Vapor-state Diffusion

  • So, Soon-Jin (Knowledge On Inc.) ;
  • Oh, Sang-Hyun (School of Electrical, Electronic and Information Engineering, Wonkwang University) ;
  • Park, Choon-Bae (School of Electrical, Electronic and Information Engineering, Wonkwang University)
  • 발행 : 2008.02.29
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초록

ZnO has intensively attracted interest for the next generation of short wavelength LEDs and semiconductor lasers. However, for the development and application of the devices based on this material, the fabrication of p-type ZnO thin films is pivotal. Generally, the process of preparation of ZnO is unavoidably accompanied by the natural donor ions such as interstitial Zn ions and oxygen vacancy ions that show n-type electrical property and make fabrication of p-type ZnO to be a hard problem. On this study, to realize stable high-quality p-type ZnO thin films, the undoped ZnO thin films were diffused with P in vapor state. The ZnO:P thin films showed high-quality p-type properties electrically and optically.

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참고문헌

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