Numerical Analysis of a Slurry Flow on a Rotating CMP Pad Using a Two-phase Flow Model

  • Nagayama, Katsuya (Department of Mechanical Information Science and Technology, Kyushu Institute of Technology) ;
  • Sakai, Tommi (Graduate School of Mechanical Information System, Kyushu Institute of Technology) ;
  • Kimura, Keiichi (Department of Mechanical Information Science and Technology, Kyushu Institute of Technology) ;
  • Tanaka, Kazuhiro (Department of Mechanical Information Science and Technology, Kyushu Institute of Technology)
  • Published : 2008.04.01

Abstract

Chemical mechanical polishing (CMP) is a very precise planarization technique where a wafer is polished by a slurry-coated pad. A slurry is dropped on the rotating pad surface and is supplied between the wafer and the pad. This research aims at reducing the slurry consumption and removing waste particles quickly from the wafer. To study the roles of grooves, slurry flows were simulated using the volume of fluid method (two-phase model for air and slurry) for pads with no grooves, and for pads with circular grooves.

Keywords

References

  1. Park, J. W., Ryu, S. H. and Chu, C. N., "Pulsed Electrochemical Deposition for 3D Micro Structuring," International Journal of Precision Engineering and Manufacturing, Vol. 6, No. 4, pp. 49-54, 2005
  2. Park, J. W., Lee, D. W., Kawasegi, N. and Morita, N., "Nanoscale Fabrication in Aqueous Solution using Tribo-Nanolithography," International Journal of Precision Engineering and Manufacturing, Vol. 7, No. 4, pp. 8-13, 2006
  3. Chang, W. S., Choi, M. J., Kim, J. G., Cho, S. H. and Whang, K. H.,"Thin Film Micromachining Using Femtosecond Laser Photo Patterning of Organic Self-assembled Monolayers," International Journal of Precision Engineering and Manufacturing, Vol. 7, No. 1, pp. 13-17, 2006
  4. Toshiroh, K. D., Seshimo, K., Suzuki, K., Philipossian, A. and Kinoshita, M., "Impact of Novel Pad Groove Designs on Removal Rate and Uniformity of Dielectric and Copper CMP," Journal of The Electrochemical Society, Vol. 151, No. 3, pp. 196-199, 2004
  5. Muldowney, G. P., "Characterization of CMP Pad Surface using a Porous-Media Flow Approach," Proceedings of AIChE Annual Meeting, Vol. 1, No.191g, p. 12, 2003
  6. Muldowney, G. P. and Tselepidakis D. T., "A Computational Study of Slurry Flow in Grooved CMP Polishing Pad," Proceedings of CMP-MIC, Vol. 1, No. 900P, pp. 147-156, 2004
  7. Nagayama, K., Morishita, H., Kimura, K. and Tanaka K., "A Computational Study on Slurry Flow between a Wafer and CMP Pad with Grooves," Towards Synthesis of Micro-/Nano-Systems, JSPE Publication Series, Vol. 1, No. B5, pp. 277-280, 2006
  8. Sundararajan, S. G., Thakurta, D., Schwendeman, D. W., Murarka, S. P. and Gill, W. N., "Two-Dimensional Wafer-Scale Chemical Mechanical Planarization Models ased on Lubrication Theory and Mass Transport," J. Electrochem. Soc., Vol. 146, No. 2, pp. 761-766, 1999 https://doi.org/10.1149/1.1391678
  9. Patir, N. and Cheng H. S., "An Average Flow Model for Determining Effects of Three-Dimensional Roughness on Partial Hydrodynamic Lubrication," Tansaction of the ASME Journal of Lubrication Tech, Vol. 100, No. 1, pp. 12-17, 1987
  10. Subramanian, R. S., Zhang, L. and Babu, S. V., "Transport Phenomena in Chemical Mechanical Polishing," J. Electrochem. Soc., Vol. 146, No. 11, pp. 4263-4272, 1999 https://doi.org/10.1149/1.1392626
  11. Lin, J. F., Chen, S. C., Ouyang, Y. L. and Tsai, M. S., "Analysis of the Tribological Mechanical Arising in the Chemical Mechanical Polishing of Copper-Film Wafers When Using a Pad With Concentric Grooves," Journal of Tribology, Vol. 128, No. 3, pp. 445-459, 2006 https://doi.org/10.1115/1.2194913
  12. Borucki, L., Charns, L. and Philipossian, A., "Analysis of Frictional Heating of Grooved and Flat CMP Polising Pads," Journal of The Electrochemical Society,Vol. 151, No. 12, pp. 809-813, 2004 https://doi.org/10.1149/1.1808635
  13. Bae, S. H., Yang, S. M. and Kim, D. H., "Effects of chemical reaction on the polishing rate and surface planarity in the copper CMP," Rheology Journal, Vol. 14, No. 2, pp. 63-70, 2002
  14. Thakurta, D. G., Borst, C. L., Schwendeman, D. W., Gutmann, R. J. and Gill, W. N., "Three-Dimensional Chemical Mechanical Planarization Slurry Flow Model Based on Lubrication Theory," Journal of The Electrochemical Society, Vol. 148, No. 4, pp. 207-214, 2001
  15. Ring, T. A., Feeney, P., Kasthuriran, J., Li, S., Boldridge, D. and Dirksen, J., "Modeling Wafer Surface Damage Caused During CMP," Proceedings of CMP-MIC, Vol. 1, No. 12.F, 2006