DOI QR코드

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Proximity-Scan ALD (PS-ALD) 에 의한 Al2O3와 HfO2 박막증착 기술 및 박막의 전기적 특성

Deposition and Electrical Properties of Al2O3와 HfO2 Films Deposited by a New Technique of Proximity-Scan ALD (PS-ALD)

  • 권용수 (한양대학교 전자전기제어계측공학과) ;
  • 이미영 (한양대학교 전자전기제어계측공학과) ;
  • 오재응 (한양대학교 전자전기제어계측공학과)
  • Kwon, Yong-Soo (School of Electrical and Computer Engineering, Hanyang University) ;
  • Lee, Mi-Young (School of Electrical and Computer Engineering, Hanyang University) ;
  • Oh, Jae-Eung (School of Electrical and Computer Engineering, Hanyang University)
  • 발행 : 2008.03.25

초록

A new cost-effective atomic layer deposition (ALD) technique, known as Proximity-Scan ALD (PS-ALD) was developed and its benefits were demonstrated by depositing $Al_2O_3$ and $HfO_2$ thin films using TMA and TEMAHf, respectively, as precursors. The system is consisted of two separate injectors for precursors and reactants that are placed near a heated substrate at a proximity of less than 1 cm. The bell-shaped injector chamber separated but close to the substrate forms a local chamber, maintaining higher pressure compared to the rest of chamber. Therefore, a system configuration with a rotating substrate gives the typical sequential deposition process of ALD under a continuous source flow without the need for gas switching. As the pressure required for the deposition is achieved in a small local volume, the need for an expensive metal organic (MO) source is reduced by a factor of approximately 100 concerning the volume ratio of local to total chambers. Under an optimized deposition condition, the deposition rates of $Al_2O_3$ and $HfO_2$ were $1.3\;{\AA}/cycle$ and $0.75\;{\AA}/cycle$, respectively, with dielectric constants of 9.4 and 23. A relatively short cycle time ($5{\sim}10\;sec$) due to the lack of the time-consuming "purging and pumping" process and the capability of multi-wafer processing of the proposed technology offer a very high through-put in addition to a lower cost.

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참고문헌

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