Journal of the Korea Academia-Industrial cooperation Society (한국산학기술학회논문지)

The Korea Academia-Industrial cooperation Society (한국산학기술학회)
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Study on the characteristics of ALD, ZrO2 thin film for next-generation high-density MOS devices

차세대 고집적 MOS 소자를 위한 ALD ZrO2 박막의 특성 연구

  • 안성준 (선문대학교 정보통신공학부/차세대반도체기술연구소) ;
  • 안승준 (선문대학교 신소재과학부/차세대반도체기술연구소)
  • Published : 2008.02.28
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Abstract

As the packing density of IC devices gets ever higher, the thickness of the gate $SiO_2$ layer of the MOS devices is now required to be reduced down to 1 nm. For such a thin $SiO_2$ layer, the MOS device cannot operate properly because of tunneling current and threshold voltage shift. Hence there has been much effort to develop new dielectric materials which have higher dielectric constants than $SiO_2$ and is free from such undesirable effects. In this work, the physical and electrical characteristics of ALD $ZrO_2$ film have been studied. After deposition of a thin ALD $ZrO_2$ film, it went through thermal treatment in the presence of argon gas at $800^{\circ}C$ for 1 hr. The characteristics of morphology, crystallization kinetics, and interfacial layer of $Pt/ZrO_2/Si$ samples have been investigated by using the analyzing instruments like XRD, TEM and C-V plots. It has been found that the characteristics of the $Pt/ZrO_2/Si$ device was enhanced by the thermal treatment.

소자가 점점 고집적화 됨에 따라, MOS 소자 제조에 있어서 $SiO_2$의 두께가 ${\sim}1nm$로 낮아질 경우 발생하는 터널링전류와 문틱전압 천이를 방지할 수 있는 새로운 게이트용 유전물질을 개발하여 소자의 크기를 줄이는데 주력하고 있다. 본 실험에서는 원자층증착(ALD: atomic layer deposition) 방법으로 증착된 $ZrO_2$ 박막의 물리적, 전기적 특성에 대하여 연구하였다. ALD $ZrO_2$ 박막을 증착한 후 Ar 가스 분위기에서 $800^{\circ}C$, 1 시간동안 열처리한 다음 XRD, TEM, 그리고 C-V plots을 이용하여 $Pt/ZrO_2/Si$ 소자의 형태, 결정화 동역학, 그리고 경계층 특성을 평가한 결과 열처리에 의해 소자의 특성이 크게 향상됨을 알 수 있었다.

Keywords

References

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