The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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Approximate Equations and Sensitivity for Breakdown Voltages of Cylindrical PN Junctions in Power Semiconductor Devices

전력 반도체 소자에 적용되는 원통형 PN 접합의 항복전압에 대한 근사식과 민감도

  • Published : 2008.12.01
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Abstract

Approximate equations for cylindrical breakdown voltages of planar pn junctions are proposed and verified. The equations show good agreement with the Baliga's results for $r_{j}/Wpp{\leqq}0.3$ and with numerical results for $r_{j}/Wpp{\geqq}0.3$ within 1% error. Sensitivity of the breakdown voltage with respect to the doping concentrations is successfully derived using the approximate equations. The sensitivity formula can be utilized in the area of tolerance design of power semiconductor devices.

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References

  1. B. Jayant Baliga, Power semiconductor devices, PWS Pub. Co., 1996
  2. W. Fulop, "Calculation of avalanche breakdown of silicon p-n junctions," Solid State Electron. Vol. 10, pp. 39 - 43. 1967 https://doi.org/10.1016/0038-1101(67)90111-6
  3. J. Roig et aI., "A 200V silicon-on-sapphire LDMOS structure with a step oxide extended field plate," Solid-State Electron. Vol. 48, pp. 1007 - 1015, 2004 https://doi.org/10.1016/j.sse.2003.12.015
  4. I. Cortes et aI., "A numerical study of field plate configurations in RF SOl LDMOS transistors," Solid State Electron. Vol. 50, pp. 155 - 163. 2005
  5. I. Cortes et aI., "Super junction LDMOS on thick-SOl technology for RF applications," Microelectronics Journal, Vol. 39, pp 922-927, 2008 https://doi.org/10.1016/j.mejo.2007.11.017
  6. Sedra and Smith, Microelectronic Circuits, Oxford University Press, 1998