대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

GaAs Gunn 다이오드 소자의 제작과 부성미분저항

Fabrication of GaAs Gunn diodes and Characterization of Negative Differential Resistance

  • 김미라 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 이성대 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 채연식 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 이진구 (동국대학교 밀리미터파 신기술 연구센터)
  • Kim, Mi-Ra (Millimeter-wave Innovation Technology Research Center, Dongguk University) ;
  • Lee, Seong-Dae (Millimeter-wave Innovation Technology Research Center, Dongguk University) ;
  • Chae, Yeon-Sik (Millimeter-wave Innovation Technology Research Center, Dongguk University) ;
  • Rhee, Jin-Koo (Millimeter-wave Innovation Technology Research Center, Dongguk University)
  • 발행 : 2007.07.25
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초록

고주파에서 동작하는 높은 출력전력과 dc-rf 변환효율을 가진 GaAs Gunn 다이오드에 대한 기본 연구로써, graded gap injector를 가진 planar 형태의 GaAs Gunn 다이오드를 제작하고 그 DC 특성을 살펴보았다. 제안된 에피 구조를 사용하여 GaAs Gunn 다이오드 소자를 설계, 제작하였으며 이동전자소자인 Gunn 다이오드의 DC 특성이 부성미분저항을 가짐을 확인하였다. 제작된 소자의 부성미분저항 특성을 다이오드의 cathode 반지름의 함수로 고찰하였으며, 이 과정을 통하여 계곡 간 전자이동 특성을 분석하였다.

The DC characteristics of GaAs Gunn diode are investigated as a preliminary study on the planar grade gap injector GaAs Gunn diode which is the transferred electron device with high output power and dc-rf conversion efficiency. The Gunn devices we fabricated were confirmed to have the DC characteristics of negative differential resistance(NDR). We discussed the nature of the NDR effect, including the electron intervalley transfer; the NDR effect was examined for six different cathode radii.

키워드

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