References
- B. K. Ridley and T. B. Watkins, 'The possibility of negative resistance effects in semiconductors,' Proc. Phys. Soc. Lond., Vol. 78, pp. 293, 1961
- C. Hilsum, 'Transferred electron amplifiers and oscillators,' Proc. IRE., Vol. 50, pp.185, 1962
- J. B. Gunn, 'Microwave oscillation of current III-V semiconductors,' Solid State Comm., Vol. 1, pp. 88, 1963
- W. Watanabe, T. Deguchi, and A. Nakagawa, 'V-band planar Gunn oscillators and VCOs on AlN substrates using flip-chip bonding technology,' IEEE MTT-S Digest, pp.13-16, 1999
- A. Nakagawa, K. Watanabe, T. Yoshida, T. Deguchi, and Y. Oki, '77GHz planar Gunn VCOs on AlN substrates using novel flip-chip InP Gunn diodes,' IEEE MTT-S Digest, pp.1205-1208, 2000
- S. Sze, Semiconductor devices. Physics and Technology, Wiley, New York, 1985
- P. T. Bulman, G. S. Hobson, and B. C. Taylor, Transferred Electron Devices, Academic Press, London and New York, 1972
- S. Hutchinson, J. Stephens, M, Carr, M, J, Kelly, 'Implant isolation scheme for current confinement in graded-gap Gunn diodes,' Electron Lett. Vol 32, pp.851, 1996
- NR Couch, PH Beton, MJ Kelly, DJ Knight, and J Ondria, 'The use of linearly graded composition AlGaAs injectors for intervalley transfer in GaAs: theory and experiment,' Solid-State Electron. Vol. 31, No 3-4, pp. 613-616, 1988 https://doi.org/10.1016/0038-1101(88)90353-X
- Simone Montanari, Arno Forster, Mihail Ion Lepsa, and Hans Luth, 'High frequency investigation of graded gap injectors for GaAs Gunn diodes,' Solid-State Electron Vol. 49, pp. 245-250, 2005 https://doi.org/10.1016/j.sse.2004.08.014
- T. W. Hickmott, P. M. Solomon, R. Fischer, and H. Morkoc, 'Negative charge, barrier heights, and the conduction-band discontinuity in AlxGa1-xAs capacitors,' J. Appl. Phys, Vol. 57, pp. 2844-2853, 1985 https://doi.org/10.1063/1.335221
- Phillip D. Blais, 'Edge acuity and resolution in positive type photoresist systems,' Solid State Technology, Vol. 20, pp. 76-85, 1977
- Il-Hyung Lee, Sang-Myung Kim, Kwan-Ki Youn, Seok-Hyun Shin, and Jin-Koo Rhee, 'The fabrication of a sub-micro gate using IR process', proceedings on KITE Fall Conference, pp.356-358, 1992
- M. A. Harry, M. J. Kelly, G. M. Dunn, M. J. Kearney, J. Stephens, and M. Carr, 'The freespace oscillation of heterojunction GaAs/ AlGaAs Gunn diodes as a design guide,' Semicond. Sci. Technol. Vol. 14, pp. L19-L20, 1999 https://doi.org/10.1088/0268-1242/14/5/101
- E. Alekseev and D. Pavlidis, 'Microwave potential of GaN-based Gunn devices,' Electronics Letters Vol. 36, No. 2, pp.176-178, 2000 https://doi.org/10.1049/el:20000200
- O. Madelung, Semiconductors-basic data, Springer, Berlin, 1996