References
- J. Kim, S. Ko, S. Jeon, J.-W. Park, and S. Hong, 'Balanced topology to cancel Tx leakage in CW radar', IEEE Microwave and Wireless Components Letters, Vol. 14, No.9, p. 443, 2004 https://doi.org/10.1109/LMWC.2004.832080
- J. Kim, D. Baek, S. Jeon, J.-W. Park, and S. Hong, 'A K-band InGaP/GaAs HBT balanced MMIC VCO', IEEE Microwave and Wireless Components Letters, Vol. 13, No. 11, p. 478, 2003 https://doi.org/10.1109/LMWC.2003.818530
- K. A. Lee, D. H. Lee, H. Park, S. Cheon, J.-W. Park, H. Yoo, and S. Hong, 'A InGaP/GaAs HBT WLAN power amplifier with power detector', 34' European Microwave Conference, p. 345, 2004
- O. Lee, J. Kim; S. Jeon, J.-W. Park, and S. Hong, 'A V-band VCO and Frequency Divider MMICs for Phase-locked Loop', IEEE MTT-S Digest, p. 1321, 2004
- S. S. Choi; J. Y. Lee, H. K. Choi, J. C. Lee, B. Lee, J. H. Kim, N. Y. Kim, Y. H. Lee, S. H. Jeon, and J. W. Park, 'High linear, low power and broadbandwidth double balance mixer with low LO-power using InGaP/GaAs HBT MMIC process', Asia-Pacific Microwave Conference, Vol. 2, p. 886, 2003
- J.-W. Park, Master thesis, Kwangwoon University, Seoul, Korea, 1989
- D. Caffin, L. Bricard, J. L. Courant, L. S. How Kee Chun, B. Lescaut, A. M. Duchenois, M. Meghelli, J. L. Benchimol, and P. Launay, 'Passivation of INPbased HBT's for high bit rate circuit applications', Proc. of the 1997 Int. Conf. on Indium Phosphide and Related Materials. Cape Cod, MA, USA., p. 637,1997
- J. J. Liou, C. I. Huang, B. Bayraktaroglu, and K. B. Parab, 'Base and collector leakage currents of AIGaAs/GaAs HBTs', J. Appl. Phys., Vol. 76, No. 5, p. 3187, 1994
- W. Liu, 'Handbook of III-V Heterojunction Bipolar Transistors', Wiley-Interscience, p. 143, 1998
- S. M. Sze, 'High-Speed Semiconductor Devices', Wiley-Interscience, p. 337, 1990
- T. Kikawa, S. Takatami, H. Masuda, and T. Tanoue, 'Passivation of InP-based HBTs-relation to surface fermi-level', Proc. of the 1998 Int. Conf. On Indium Phosphide and Related Materials., Tsukuba, Japan,p. 76,1998
- A Samelis, Ph. D thesis, University of Michigan, 1996
- T. Takahashi, S. Sasa, A. Kawano, T. Iwai, and T, Fujii, 'High-reliability InGaP/GaAs HBTs fabricated by self-aligned process', Proceedings of the 1994 IEEE International Electron Devices Meeting, San Francisco, CA, USA, p. 191, 1994
- S. R. Bahl, L. H. Camnitz, D. Houng, M. Mierzwinski, J. Turner, and D. Lefforge, 'Reliability investigation of InGaP/GaAs HBTs', Proceedings of the 1995 International Electron Devices Meeting Washington, DC, USA, p. 815,1995